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Volumn 157, Issue 1, 2010, Pages

High quality area-selective atomic layer deposition co using ammonia gas as a reactant

(9) Lee, Han Bo Ram a Kim, Woo Hee b Lee, Jeong Won b Kim, Jae Min a Heo, Kwang c Hwang, In Chan b Park, Yongjun b Hong, Seunghun c Kim, Hyungjun a

a Yonsei University (South Korea)

b Pohang University of Science and Technology (POSTECH) (South Korea)

c Seoul National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA GAS; BLOCKING LAYERS; CO FILMS; CO LINE; CO THIN FILMS; CONFORMALITY; ETCHING PROCESS; FILM QUALITY; HIGH QUALITY; NANOSCALE THICKNESS; OCTADECYLTRICHLOROSILANE; THERMAL ALD;

ATOMIC LAYER DEPOSITION; MONOLAYERS; SILANES; THIN FILMS;

COBALT;

EID: 72249088616 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3248002 Document Type: Article

Times cited : (65)

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