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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 30, Issue 5, 2012, Pages

Interface studies on high-k/GaAs MOS capacitors by deep level transient spectroscopy

(4) Kundu, Souvik a Anitha, Yelagam a Chakraborty, Supratic b Banerji, Pallab a

a INDIAN INSTITUTE OF TECHNOLOGY (India)

b SAHA INSTITUTE OF NUCLEAR PHYSICS (India)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; DIELECTRIC DEVICES; GALLIUM ARSENIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOS CAPACITORS; SEMICONDUCTING GALLIUM; SPECTROSCOPIC ANALYSIS; ZINC OXIDE;

CAPACITANCE VOLTAGE; CAPTURE CROSS SECTIONS; EXPERIMENTAL ANALYSIS; GAAS; GAAS SURFACES; HIGH FREQUENCY; HIGH-K GATE DIELECTRICS; INTERFACE TRAP DENSITY; INTERFACE TRAPS; MAJORITY CARRIERS; TRAP ENERGY LEVELS; ULTRATHIN LAYERS; VALANCE BANDS; WIDE BAND GAP; ZNO;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 84866497030 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.4745882 Document Type: Article

Times cited : (12)

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