Capacitance-voltage characterization of GaAs- Al2O3 interfaces

Applied Physics Letters

Volumn 93, Issue 18, 2008, Pages

  Brammertz, G ^a   Lin, H C ^a   Martens, K ^a   Mercier, D ^a   Sioncke, S ^a   Delabie, A ^a   Wang, W E ^a   Caymax, M ^a   Meuris, M ^a   Heyns, M ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CURRENTS; ENERGY GAP; PASSIVATION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES;

BANDGAP; CAPACITANCE VOLTAGES; CONDUCTANCE METHODS; DEFECT MODELS; FORMING GAS ANNEALING; FREQUENCY DISPERSIONS; INTERFACE STATES; LARGE PARTS; MIDGAP ENERGIES; MIDGAP INTERFACES; ROOM TEMPERATURES;

GALLIUM ALLOYS;

EID: 55849123029     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3005172     Document Type: Article

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