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Volumn 45, Issue 43, 2012, Pages

Interfacial and electrical properties of HfO 2 gate dielectrics grown on GaAs by atomic layer deposition using different oxidants

(6) Byun, Young Chul a Mahata, Chandreswar a An, Chee Hong a Oh, Jungwoo b Choi, Rino c Kim, Hyoungsub a

a Sungkyunkwan University (South Korea)

b Yonsei University (South Korea)

c Inha University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BORDER TRAPS; ELECTRICAL STABILITY; GAAS; HIGH-FIELD; STRESS-INDUCED; TRAP GENERATION;

ATOMIC LAYER DEPOSITION; GALLIUM ARSENIDE; GATE DIELECTRICS; HAFNIUM OXIDES; OXIDANTS; SEMICONDUCTING GALLIUM;

ELECTRIC PROPERTIES;

EID: 84867389256 PISSN: 00223727 EISSN: 13616463 Source Type: Journal
DOI: 10.1088/0022-3727/45/43/435305 Document Type: Article

Times cited : (15)

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