Interfacial characteristics of Al/Al2O3/ZnO/n-GaAs MOS capacitor

Chinese Physics B

Volumn 22, Issue 7, 2013, Pages

  Liu, Chen ^a   Zhang, Yu Ming ^a   Zhang, Yi Men ^a   Lü, Hong Liang ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

gate dielectric; interface trap density; Terman method

Indexed keywords

C-V CURVE; FREQUENCY DISPERSION; INTERFACE QUALITY; INTERFACE TRAP DENSITY; INTERFACIAL CHARACTERISTICS; SMOOTH INTERFACE; TERMAN METHODS; ZNO LAYERS;

DIELECTRIC DEVICES; GALLIUM ARSENIDE; GATE DIELECTRICS; MOS CAPACITORS; PHOTOELECTRONS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

SEMICONDUCTING GALLIUM;

EID: 84880560330     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/22/7/076701     Document Type: Article

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