Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates

Journal of Applied Physics

Volumn 111, Issue 12, 2012, Pages

  O'Connor, E ^a   Cherkaoui, K ^a   Monaghan, S ^a   O'Connell, D ^a   Povey, I ^a   Casey, P ^b   Newcomb, S B ^c   Gomeniuk, Y Y ^d   Provenzano, G ^e   Crupi, F ^e   Hughes, G ^b   Hurley, P K ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b DUBLIN CITY UNIVERSITY   (Ireland)

^c Glebe Scientific Ltd   (Ireland)

^d INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^e UNIVERSITY OF CALABRIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AC SIGNALS; C-V CHARACTERISTIC; CAPACITANCE VOLTAGE; EXPERIMENTAL OBSERVATION; GAAS; GAAS SUBSTRATES; GATE OXIDE; HIGH DIELECTRIC CONSTANT (HIGH-K); HIGH-K OXIDES; INVERSION EFFECTS; INVERSION REGIONS; LOW FREQUENCY; LOW-FREQUENCY RESPONSE; METAL GATE ELECTRODES; METAL-OXIDE- SEMICONDUCTORCAPACITORS; MGO; NEGATIVE CHARGE; OXIDE SURFACE; P-TYPE; POSITIVE CHARGES; RESIDUAL CHARGE; ROOM TEMPERATURE;

CARRIER MOBILITY; DIELECTRIC DEVICES; FREQUENCY RESPONSE; GALLIUM ARSENIDE; INTERFACES (MATERIALS); MOS CAPACITORS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICE STRUCTURES; SIGNAL PROCESSING; SILICON;

SEMICONDUCTING SILICON;

EID: 84863527577     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4729331     Document Type: Article

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