Metal-oxide-semiconductor devices on GaAs with high-k dielectric and MOCVD grown ZnO interface passivation layer

2011 International Conference on Nanoscience, Technology and Societal Implications, NSTSI11

Volumn , Issue , 2011, Pages

  Kundu, Souvik ^a   Banerji, Pallab ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

Fermi level pinning; frequency dispersion; GaAs metal oxide semiconductor; interface passivation layer; metal organic chemical vapor deposition (MOCVD)

Indexed keywords

FERMI LEVEL PINNING; FREQUENCY DISPERSION; GAAS; INTERFACE PASSIVATION LAYER; METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD);

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC DEVICES; DISPERSIONS; FERMI LEVEL; GALLIUM ARSENIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INDUSTRIAL CHEMICALS; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALS; MICROELECTRONICS; NANOSCIENCE; ORGANIC CHEMICALS; ORGANOMETALLICS; OXIDE FILMS; PASSIVATION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICES; TITANIUM DIOXIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

VANADIUM;

EID: 84855901628     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NSTSI.2011.6111800     Document Type: Conference Paper

References (25)

1. 2 gate dielectric on GaAs,"Appl. Phys. Lett., vol. 90, no. 18, pp. 183510-1-183510-3, May. 2007.
2. 3 gate dielectric," Appl. Phys. Lett., vol. 91, no. 6, pp. 63501-1-63501-3, Aug. 2007.
3. Y. Xuan, H. Lin, and P. D. Ye. "Simplified surface preparation for GaAs passivation using atomic layer-deposited high-k dielectrics," IEEE Trans. Electron Devices. Vol. 54, no. 8, pp. 1811-1817, Aug. 2007. (Pubitemid 47260256)
4. D. Shahrjerdi, M. M. Oye, A. L. Holmes, Jr., and S. K. Banerjee. "Unpinned metal gate/high-k gate GaAs capacitors: Fabrication and characterization," Appl. Phys. Lett., vol. 89, no. 4, pp. 43501-1-43501-3, Jul. 2006.
5. S. Koveshnikov, W. Tsai, I. Ok, J. C. Lee, V. Torkanov, M. Yakimov, and S. Oktyabrsky. "Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer," Appl. Phys. Lett., vol. 88, no. 2, pp. 22106-1-22106-3, Jan. 2006.
6. 2-GaAs metal-oxidesemiconductor capacitor using dimethylaluminumhydride- derived aluminum oxynitride interface passivation layer," Appl. Phys. Lett., vol. 97, no. 6, pp. 62908-1-62908-3, Aug. 2010.
7. 2 gate dielectric on aluminum oxynitride passivated p-GaAs," J. Appl. Phys., vol. 103, no. 2, pp. 34508-1-34508-5, Jul. 2008.
8. 2/TaN gate stack and thermal nitridation surface passivation," Appl. Phys. Lett., vol. 90, no. 25, pp. 252904-1-252904-3, Jun. 2006.
9. E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology. New York: Wiley, 1982, ch. 5, pp. 176-232.
10. B. Tataroǧlu, Ş. Altindal, A. Tataroǧlu, "The C-V-f and G/ω-V-f characteristics of Al/SiO2/p-Si (MIS) structures," Microelectron Eng. vol. 83, pp. 2021-2026, May. 2006.
11. J. Bruley, S. Stemmer, F. Ernst, M. Rhule, W.-Y. Hsu, and R. Raj. "Nanostructure and chemistry of a (100) MgO/ (100) GaAs interface,"Appl. Phys. Lett., vol. 65, no. 5, pp. 564-1-564-3, May. 1994.
12. 2 thin film for high-k gate insulator," Thin Solid Films, vol. 424, no. 2, pp. 224-228, Jan. 2003.
13. 2 thin films prepared by thermal oxidation,"Physica B, vol. 403, no. 19, pp. 3718-3723, Oct. 2008.
14. J. Robertson and B. Falabretti. "Band offsets of high K gate oxides on III-V semiconductors," J. Appl. Phys., vol. 100, no. 1, pp. 14111-14118, Jul. 2006.
15. S. Kelly, H. F. Pollak, and M. Tomkiewicz. "Raman spectroscopy as a morphological probe for TiO2 aerogels," J. Phys. Chem. B, vol. 101, pp. 2730-2734, Apr. 1997. (Pubitemid 127581074)
16. 2 gate dielectric stacks on 4H-SiC substrate," Appl. Phys. Lett., vol. 88, no. 7, pp. 72910-1-72910-3, Feb. 2006.
17. J. F. Moulder, W. F. Stickle, P. F. Soool, and K. D. Bomben. Handbook of X-ray photoelectron spectroscopy. Perkin-Elmer corporation, USA. 1992.
18. 3 gate dielectrics on GaAs grown by atomic layer deposition," Appl. Phys. Lett., vol. 86, no. 15, pp. 152904-1-152904-3, Apr. 2005.
19. 2gate dielectric on silicon passivated p-GaAs substrate," Appl. Phys. Lett., vol. 91, no. 24, pp. 242101-1-242101-3, Dec. 2007.
20. Y. Cao, J. Zhang, X. Li, T. H. Kosel, P. Fay, and D. C. Hall. "Electrical properties of InAlP native oxides for metal-oxidesemiconductor device application," Appl. Phys. Lett., vol. 86, no. 6, pp. 62105-1-62105-3, Feb. 2005.
21. C. O. Chui, S. Ramanathan, B. B. Triplett, P. C. McIntyre, and K. C. Saraswat. "Germanium metal-oxide-semiconductor capacitors incorporating ultrathin high-k gate dielectric," IEEE Electron Device Lett., vol. 23, pp. 473-475, Aug. 2002. (Pubitemid 34950025)
22. 3 nanolaminate gate dielectric,"Appl. Phys. Lett., vol. 91, no. 14, pp. 142122-1 - 142122-3, Oct. 2007.
23. 2 and silicon interface passivation layer," IEEE IEDM Tech. Dig., vol. 839, pp. 1-4, Dec. 2006.
24. H. Zhao, H. S. Kim, F. Zhu, M. Zhang, I. Ok, S. Park, J. W. Yem, and J. C. Lee. "Metal-oxide-semiconductor capacitors on GaAs with germanium nitride passivation layer," Appl. Phys. Lett. vol. 91, no. 17, pp. 172101-1-172101-3
25. 2 gate dielectric stack on 4H - SiC," J. Appl. Phys., vol. 102, no. 2, pp. 24105-24109, Jul. 2007.