High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning

Applied Physics Letters

Volumn 100, Issue 7, 2012, Pages

  Jussila, H ^a   Mattila, P ^a   Oksanen, J ^a   Perros, A ^a   Riikonen, J ^a   Bosund, M ^a,b   Varpula, A ^a,c   Huhtio, T ^a   Lipsanen, H ^a   Sopanen, M ^a  

^a AALTO UNIVERSITY   (Finland)

^b Beneq Oy   (Finland)

^c VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ATOMIC LAYER DEPOSITED; BANDBENDING; EX SITU; FERMI-LEVEL UNPINNING; GAAS; HIGH-K INSULATORS; METAL INSULATOR SEMICONDUCTOR CAPACITORS; MIS CAPACITORS; PASSIVATION LAYER; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; SURFACE OXIDE; TEMPERATURE-INDUCED;

CAPACITORS; GALLIUM ARSENIDE; MIS DEVICES; PASSIVATION;

SEMICONDUCTING GALLIUM;

EID: 84857289505     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3687199     Document Type: Article

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