Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al 2O3/HfO2 (EOT < 1 nm) for low-power logic applications

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2013, Pages

  Kim, T W ^a   Kim, D H ^a   Koh, D H ^b   Kwon, H M ^a   Baek, R H ^a   Veksler, D ^a   Huffman, C ^a   Matthews, K ^a   Oktyabrsky, S ^a   Greene, A ^a   Ohsawa, Y ^a   Ko, A ^c   Nakajima, H ^c   Takahashi, M ^c   Nishizuka, T ^c   Ohtake, H ^c   Banerjee, S K ^b   Shin, S H ^a   Ko, D H ^a   Kang, C ^a   Gilmer, D ^a   Hill, R J W ^a   Maszara, W ^a   Hobbs, C ^a   Kirsch, P D ^a   more..

^a Sematech ^*  (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^c Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84894383437     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2013.6724641     Document Type: Conference Paper

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