Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection

Optics Express

Volumn 22, Issue 13, 2014, Pages 15639-15652

  Conley, Benjamin R ^a   Mosleh, Aboozar ^a   Ghetmiri, Seyed Amir ^a   Du, Wei ^a   Soref, Richard A ^b   Sun, Greg ^b   Margetis, Joe ^c   Tolle, John ^c   Naseem, Hameed A ^a   Yu, Shui Qing ^a  

^a University of Arkansas   (United States)

^b UNIVERSITY OF MASSACHUSETTS BOSTON   (United States)

^c ASM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; INFRARED DETECTORS; INFRARED RADIATION; PHOTOCONDUCTING MATERIALS; SILICON; TEMPERATURE MEASUREMENT; TIN;

CARRIER ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION REACTORS; DARK I-V CHARACTERISTICS; OPTICAL CHARACTERIZATION; ORDERS OF MAGNITUDE; SPECIFIC DETECTIVITY; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT;

SEMICONDUCTING SILICON;

EID: 84903697126     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.22.015639     Document Type: Article

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