Photoconductivity of germanium tin alloys grown by molecular beam epitaxy

Applied Physics Letters

Volumn 102, Issue 14, 2013, Pages

  Coppinger, Matthew ^a   Hart, John ^a   Bhargava, Nupur ^a   Kim, Sangcheol ^a   Kolodzey, James ^a  

^a UNIVERSITY OF DELAWARE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION EDGES; ATOMIC PERCENTAGE; BAND GAP ENERGY; GERMANIUM TINS; OPTICAL ABSORPTION COEFFICIENTS; PHOTOCURRENT SPECTROSCOPY; SN CONTENTS;

ENERGY GAP; EPITAXIAL GROWTH; GERMANIUM; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; TIN ALLOYS;

TIN;

EID: 84876389277     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4800448     Document Type: Article

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