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Volumn 103, Issue 23, 2013, Pages

GeSn-based p-i-n photodiodes with strained active layer on a Si wafer

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY SPLITTINGS; HETEROJUNCTION PHOTODIODES; INFRARED PHOTODETECTOR; LOWER ENERGIES; OPTICAL RESPONSE; PHOTON ENERGY; PIN PHOTODIODE; SPECTRAL CHARACTERISTICS;

EID: 84889789009     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4840135     Document Type: Article
Times cited : (147)

References (25)
  • 1
    • 0027887558 scopus 로고
    • Silicon-based optoelectronics
    • 10.1109/5.248958
    • R. A. Soref, " Silicon-based optoelectronics.," Proc. IEEE 81, 1687 (1993). 10.1109/5.248958
    • (1993) Proc. IEEE , vol.81 , pp. 1687
    • Soref, R.A.1
  • 15
    • 0028271267 scopus 로고
    • 10.1016/0022-0248(94)90727-7
    • J. E. Ayers, J. Cryst. Growth 135, 71 (1994). 10.1016/0022-0248(94)90727- 7
    • (1994) J. Cryst. Growth , vol.135 , pp. 71
    • Ayers, J.E.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.