Mid-infrared electroluminescence from a Ge/Ge0.922Sn 0.078/Ge double heterostructure p-i-n diode on a Si substrate

Applied Physics Letters

Volumn 102, Issue 18, 2013, Pages

  Tseng, H H ^a   Wu, K Y ^a   Li, H ^a   Mashanov, V ^a   Cheng, H H ^a   Sun, G ^b   Soref, R A ^b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b UNIVERSITY OF MASSACHUSETTS BOSTON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE STRUCTURES; DIODE STRUCTURE; DOUBLE HETEROSTRUCTURES; EMISSION SPECTRUMS; INJECTION CURRENT DENSITY; LIGHT EMITTING DEVICES; LOW TEMPERATURES; ROOM TEMPERATURE;

ELECTROLUMINESCENCE; EMISSION SPECTROSCOPY; ENERGY GAP; GERMANIUM; INFRARED DEVICES; MOLECULAR BEAM EPITAXY; SILICON;

TIN;

EID: 84877734889     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4804675     Document Type: Article

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