Material characterization of Ge1-x Sn x alloys grown by a commercial CVD system for optoelectronic device applications

Journal of Electronic Materials

Volumn 43, Issue 4, 2014, Pages 938-946

  Mosleh, Aboozar ^a,b   Ghetmiri, Seyed Amir ^a,b   Conley, Benjamin R ^a,b   Hawkridge, Michael ^a   Benamara, Mourad ^a   Nazzal, Amjad ^c   Tolle, John ^d   Yu, Shui Qing ^b   Naseem, Hameed A ^b  

^a UNIVERSITY OF ARKANSAS   (United States)

^b University of Arkansas   (United States)

^c WILKES UNIVERSITY   (United States)

^d Public and Scientific Affairs Board   (United States)

Author keywords

CVD; Germanium alloys; GeSn; pseudomorphic growth; semiconductor growth; silicon

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; GERMANIUM ALLOYS; GERMANIUM METALLOGRAPHY; MOS DEVICES; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; OXIDE SEMICONDUCTORS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SILICON; SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; TIN; TIN METALLOGRAPHY; X RAY POWDER DIFFRACTION;

COMMERCIAL CHEMICALS; COMPLEMENTARY METAL OXIDE SEMICONDUCTOR PROCESS; GESN; MATERIAL CHARACTERIZATIONS; MISFIT AND THREADING DISLOCATIONS; PSEUDOMORPHIC GROWTH; RUTHERFORD BACK-SCATTERING SPECTROMETRY; STRUCTURAL AND OPTICAL PROPERTIES;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 84898827043     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-014-3089-2     Document Type: Article

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