Heteroepitaxial growth of GaSb on Si(0 0 1) substrates

Journal of Crystal Growth

Volumn 264, Issue 1-3, 2004, Pages 21-25

  Akahane, Kouichi ^a   Yamamoto, Naokatsu ^a   Gozu, Shin Ichiro ^a   Ohtani, Naoki ^a  

^a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

Author keywords

A1. Nanostructures; A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting III V materials

Indexed keywords

DESORPTION; DIFFRACTOMETERS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MONOCHROMATORS; NANOSTRUCTURED MATERIALS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING FILMS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SILICON; SUPERLATTICES; X RAY DIFFRACTION ANALYSIS;

ANTIMONIDES; CRYSTAL QUALITY; NANOSTRUCTURES; SEMICONDUCTING III-V MATERIALS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 1342327998     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.12.041     Document Type: Article

References (10)

1. Alphandéry E., Nicholas R.J., Mason N.J., Lyapin S.G., Klipstein P.C. Phys. Rev. B. 65:2002;115322.
2. Hatami F., Ledentsov N.N., Grundmann M., Böhrer J., Heinrichsdorff F., Beer M., Bimberg D., Ruvimov S.S., Werner P., Gösele U., Heydenreich J., Richter U., Ivanov S.V., Meltser B.Ya., Kop'ev P.S., Alferov Zh.I. Appl. Phys. Lett. 67:1995;656.
3. Akiyama M., Kawarada Y., Kaminishi K. Jpn. J. Appl. Phys. 23:1984;L843.
4. Nishinaga T., Nakano T., Zhang S. Jpn. J. Appl. Phys. 27:1988;L964.
5. Fischer R., Morkoc H., Neumann D.A., Zabel H., Choi C., Otsuka N., Longerbone M., Erickson L.P. J. Appl. Phys. 60:1986;1640.
6. Eisenbeiser K., Emrick R., Droopad R., Yu Z., Finder J., Rockwell S., Holmes J., Overgaard C., Ooms W. IEEE Electron. Dev. Lett. 23:2002;300.
7. Malik R.J., van der Ziel J.P., Levine B.F., Behtea C.G., Walker J. J. Appl. Phys. 59:1986;3909.
8. Takahagi T., Nagai I., Ishitani A., Kuroda H., Nagasawa Y. J. Appl. Phys. 64:1988;3516.
9. Higashi G.S., Chabal Y.J., Trucks G.W., Raghavachari T. Appl. Phys. Lett. 56:1990;656.
10. Tanaka S., Takeuchi M., Aoyagi Y. Jpn. J. Appl. Phys. 39:2000;L831.