GeSn/Ge heterostructure short-wave infrared photodetectors on silicon

Optics Express

Volumn 20, Issue 25, 2012, Pages 27297-27303

  Gassenq, A ^a   Gencarelli, F ^b   Van Campenhout, J ^b   Shimura, Y ^b   Loo, R ^b   Narcy, G ^c   Vincent, B ^b   Roelkens, G ^a  

^a GHENT UNIVERSITY   (Belgium)

^b IMEC   (Belgium)

^c UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTO DETECTION; PHOTOCONDUCTIVE DETECTORS; RESPONSIVITY; SHORT WAVE INFRARED; SILICON SUBSTRATES; SOI WAVEGUIDES; SPECTRAL ABSORPTIONS;

GERMANIUM; INFRARED RADIATION; PHOTODETECTORS; PHOTONS;

HETEROJUNCTIONS;

GERMANIUM; QUANTUM DOT; SILICON; TIN;

ARTICLE; CHEMISTRY; ELECTRONICS; EQUIPMENT; EQUIPMENT DESIGN; INFRARED RADIATION; INFRARED SPECTROPHOTOMETRY;

ELECTRONICS; EQUIPMENT DESIGN; GERMANIUM; INFRARED RAYS; QUANTUM DOTS; SILICON; SPECTROPHOTOMETRY, INFRARED; TIN;

EID: 84870586532     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.027297     Document Type: Article

References (27)

1. y strained-layer hetero-structures with a direct Ge Bandgap," Appl. Phys. Lett. 85(7), 1175-1177 (2004).
2. G. Sun, R. A. Soref, and H. H. Cheng, "Design of a Si-based lattice-matched room-temperature GeSn/GeSiSn multi-quantum-well mid-infrared laser diode," Opt. Express 18(19), 19957-19965 (2010).
3. 6," Thin Solid Films 520(8), 3211-3215 (2012).
4. F. Gencarelli, B. Vincent, J. Demeulemeester, A. Vantomme, A. Moussa, A. Franquet, A. Kumara, J. Meersschaut, W. Vandervorst, R. Loo, M. Caymax, K. Temst, and M. Heyns, "Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn," ECS Trans. (to be published).
5. J. G. Crowder, S. D. Smith, A. Vass, and J. Keddie, "Infrared methods for gas detection," in Mid-Infrared Semiconductor Optoelectronics (Springer, 2006).
6. A. Gassenq, N. Hattasan, L. Cerutti, J. B. Rodriguez, E. Tournié, G. Roelkens, and G. Roelkens, "Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip," Opt. Express 20(11), 11665-11672 (2012).
7. L. Vivien, A. Polzer, D. Marris-Morini, J. Osmond, J. M. Hartmann, P. Crozat, E. Cassan, C. Kopp, H. Zimmermann, and J. M. Fédéli, "Zero-bias 40Gbit/s germanium waveguide photodetector on silicon," Opt. Express 20(2), 1096-1101 (2012).
8. R. Roucka, R. Beeler, J. Mathews, M. Y. Ryu, Y. Kee Yeo, J. Menendez, and J. Kouvetakis, "Complementary metal-oxide semiconductor-compatible detector materials with enhanced 1550 nm responsivity via Sn-doping of Ge/Si(100)," J. Appl. Phys. 109(10), 103115 (2011).
9. J. Werner, M. Oehme, A. Schirmer, E. Kasper, and J. Schulze, "Molecular beam epitaxy grown GeSn p-i-n photodetectors integrated on Si," Thin Solid Films 520(8), 3361-3364 (2012).
10. S. Su, B. Cheng, C. Xue, W. Wang, Q. Cao, H. Xue, W. Hu, G. Zhang, Y. Zuo, and Q. Wang, "GeSn p-i-n photodetector for all telecommunication bands detection," Opt. Express 19(7), 6400-6405 (2011).
11. y Multiple-Quantum-Well Lasers," IEEE J. Quantum Electron. 46(12), 1813-1820 (2010).
12. C. G. Van de Walle, "Band lineups and deformation in the model-solid theory," Phys. Rev. B 39(3), 1871-1883 (1989).
13. M. Krijn, "Heterojunction band offsets and effective masses in III-V quaternary alloys," Semicond. Sci. Technol. 6(1), 27-31 (1991).
14. G. Sun, R. A. Soref, and H. H. Cheng, "Design of a Si-based lattice-matched room-temperature GeSn/GeSiSn multi-quantum-well mid-infrared laser diode," Opt. Express 18(19), 19957-19965 (2010).
15. y strained-layer heterostructures with a direct Ge Bandgap," Appl. Phys. Lett. 85(7), 1175-1177 (2004).
16. V. R. D'Costa, J. Tolle, J. Xie, J. Menéndez, and J. Kouvetakis, "Transport properties of doped GeSn alloys," AIP Conf. Proc. 1199, 57-58 (2008).
17. R. Soref, J. Hendrickson, and J. W. Cleary, "Mid- to long-wavelength infrared plasmonic-photonics using heavily doped n-Ge/Ge and n-GeSn/GeSn heterostructures," Opt. Express 20(4), 3814-3824 (2012).
18. http://www.ioffe.rssi.ru/SVA/NSM/Semicond/Ge/
19. B. Vincent, F. Gencarelli, H. Bender, C. Merckling, B. Douhard, D. H. Petersen, O. Hansen, H. H. Henrichsen, J. Meersschaut, W. Vandervorst, M. Heyns, R. Loo, and M. Caymax, "Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition," Appl. Phys. Lett. 99(15), 152103 (2011).
20. J. Zeng and L. Hanssen, "Calibration of the spectral radiant power responsivity of windowed pyroelectric radiometers from 785 nm to 14 μ m," Proc. SPIE 7082, 70820Y (2008).
21. y photoconductor structures at 1.55 m: From advanced materials to prototype devices," J. Vac. Sci. Technol. B 26(6), 1952-1960 (2008).
22. C. J. Kim, H. S. Lee, Y. J. Cho, K. Kang, and M. H. Jo, "Diameter-dependent internal gain in ohmic Ge nanowire photodetectors, " Nano Lett. 10(6), 2043-2048 (2010).
23. E. Monroy, F. Calle, J. L. Pau, E. Munoz, F. Omnes, B. Beaumont, and P. Gibart, "AlGaN-based UV photodetectors," J. Cryst. Growth 230(3-4), 537-543 (2001).
24. y p-i-n heterostructure diodes," Appl. Phys. Lett. 98(6), 061109 (2011).
25. y alloys on silicon," Appl. Phys. Lett. 97(22), 221912 (2010).
26. -x Alloys," Phys. Rev. Lett. 79(10), 1937-1940 (1997).
27. x alloys with strain control by photoreflectance spectroscopy," Appl. Phys. Lett. 100(10), 102109 (2012).