Temperature-dependent photoluminescence of Ge/Si and Ge 1-ySny/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content

Applied Physics Letters

Volumn 102, Issue 17, 2013, Pages

  Ryu, Mee Yi ^a   Harris, Tom R ^b   Yeo, Y K ^b   Beeler, R T ^c   Kouvetakis, J ^c  

^a Kangwon National University   (South Korea)

^b Air Force Institute of Technology   (United States)

^c ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-GAP SEMICONDUCTORS; BANDGAP TRANSITION; LOW TEMPERATURES; ROOM TEMPERATURE; SI SUBSTRATES; SN CONTENTS; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE;

ENERGY GAP; GERMANIUM; PHOTOLUMINESCENCE; SILICON;

TIN;

EID: 84877306624     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4803927     Document Type: Article

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