Next generation of Ge 1-ySn y (y = 0.01-0.09) alloys grown on Si(100) via Ge 3H 8 and SnD 4: Reaction kinetics and tunable emission

Applied Physics Letters

Volumn 101, Issue 7, 2012, Pages

  Grzybowski, G ^a   Beeler, R T ^a   Jiang, L ^a   Smith, D J ^a   Kouvetakis, J ^a   Menendez J ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL SYNTHESIS; GASPHASE; OPTICAL QUALITIES; PHOTOLUMINESCENCE SIGNALS; SI(1 0 0); SN CONCENTRATION; TUNABLE EMISSIONS; ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION;

ASSOCIATION REACTIONS; CHEMICAL VAPOR DEPOSITION; FILM GROWTH; HETEROJUNCTIONS; REACTION KINETICS; SILICON; SILICON ALLOYS; STOICHIOMETRY; THICK FILMS; TIN; TIN ALLOYS;

GERMANIUM;

EID: 84865416859     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4745770     Document Type: Article

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