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Applied Physics Letters

Volumn 101, Issue 14, 2012, Pages

GeSn p-i-n detectors integrated on Si with up to 4% Sn

(7) Oehme, M a Schmid, M a Kaschel, M a Gollhofer, M a Widmann, D a Kasper, E a Schulze, J a

a UNIVERSITY OF STUTTGART (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

1550 NM; HETEROJUNCTION PHOTODETECTORS; LAYER STRUCTURES; LIGHT INCIDENCE; REFERENCE DIODES; RESPONSIVITY; SI SUBSTRATES; SN CONCENTRATION; ULTRA LOW TEMPERATURES;

GERMANIUM; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SILICON;

TIN;

EID: 84867525058 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4757124 Document Type: Article

Times cited : (177)

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