High-performance near-IR photodiodes: A novel chemistry-based approach to Ge and Ge-Sn devices integrated on silicon

IEEE Journal of Quantum Electronics

Volumn 47, Issue 2, 2011, Pages 213-222

  Roucka, Radek ^a   Mathews, Jay ^a   Weng, Change ^b   Beeler, Richard ^a   Tolle, John ^a   Menéndez, José ^a   Kouvetakis, John ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

Germanium tin alloys; infrared detectors; integrated optoelectronics; p i n; photodiodes; photovoltaic cell materials; semiconductor epitaxial materials; ultrahigh vacuum chemical vapor deposition

Indexed keywords

1550 NM; AT-WAVELENGTH; BAND GAPS; CIRCULAR MESA; COLLECTION EFFICIENCY; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; CURRENT-VOLTAGE MEASUREMENTS; DEPOSITION TECHNIQUE; EPITAXIAL MATERIALS; EXTERNAL QUANTUM EFFICIENCY; FILM MICROSTRUCTURES; HETEROSTRUCTURE DIODES; HIGH ENERGY; LOW TEMPERATURES; LOW THERMAL BUDGET; NEAR-IR; P-I-N; PHOTOVOLTAIC CELL MATERIALS; REVERSE BIAS; SI(1 0 0); SPECTRAL PHOTOCURRENT; THEORETICAL VALUES; ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION; ZERO BIAS;

CHEMICAL VAPOR DEPOSITION; DETECTORS; DIODES; EPITAXIAL GROWTH; GERMANIUM; GERMANIUM ALLOYS; INFRARED DETECTORS; PHOTODIODES; PHOTOELECTROCHEMICAL CELLS; PHOTOVOLTAIC CELLS; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; TIN; TIN ALLOYS; ULTRAHIGH VACUUM; VACUUM APPLICATIONS;

QUANTUM EFFICIENCY;

EID: 78751678120     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2010.2077273     Document Type: Article

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