The direct and indirect bandgaps of unstrained Si xGe 1-x-ySn y and their photonic device applications

Journal of Applied Physics

Volumn 112, Issue 7, 2012, Pages

  Moontragoon, P ^a   Soref, R A ^b   Ikonic, Z ^c  

^a Khon Kaen University   (Thailand)

^b UNIVERSITY OF MASSACHUSETTS BOSTON   (United States)

^c UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION RANGES; CRYSTALLINE SI; DEVICE APPLICATION; EMPIRICAL PSEUDO-POTENTIAL; FREE CARRIERS; INFRARED LIGHT EMITTERS; MIDINFRARED; MULTIPLE-QUANTUM-WELL LASER DIODES; OPTIMIZED DESIGNS; PHOTONIC APPLICATION; QUANTUM CONFINED STARK EFFECT; TELECOM; TERNARY DIAGRAMS;

ENERGY GAP; INFRARED DEVICES; PHOTODETECTORS; PHOTONIC DEVICES; PHOTONS; SEMICONDUCTOR QUANTUM WELLS; SILICON; TIN;

GERMANIUM;

EID: 84867489022     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4757414     Document Type: Article

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