Practical materials chemistry approaches for tuning optical and structural properties of group IV semiconductors and prototype photonic devices

IEEE Photonics Journal

Volumn 2, Issue 6, 2010, Pages 924-941

  Kouvetakis, J ^a   Mathews, J ^a   Roucka, R ^a   Chizmeshya, Andrew V G ^a   Tolle, J ^a   Menendez, J ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

Germanium; near infrared; photodetectors; Si based optoelectronics

Indexed keywords

CHEMICAL VAPOR DEPOSITION PRECURSORS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; END-PRODUCTS; EXTENDED RANGE; GROUP-IV SEMICONDUCTORS; LOW TEMPERATURES; MATERIALS SYNTHESIS; NEAR INFRARED; NEAR INFRARED SPECTRA; NEW APPROACHES; PARENT MOLECULES; PHOTOVOLTAICS; PRACTICAL MATERIALS; PROTOTYPE DEVICES; PROTOTYPE STRUCTURES; RATIONAL DESIGN; SI SUBSTRATES; SI-BASED; SI-BASED OPTOELECTRONICS; STRAIN STATE; STRUCTURAL INHERITANCE;

CHEMICAL VAPOR DEPOSITION; DISPLAY DEVICES; GERMANIUM; INFRARED DEVICES; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PHOTONIC DEVICES; SEMICONDUCTOR GROWTH; SILICON; SILICON ALLOYS; SPECTROSCOPY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77958143802     PISSN: 19430655     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOT.2010.2081357     Document Type: Article

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