Increased photoluminescence of strain-reduced, high-Sn composition Ge 1-xSnx alloys grown by molecular beam epitaxy

Applied Physics Letters

Volumn 99, Issue 18, 2011, Pages

  Chen, Robert ^a   Lin, Hai ^a   Huo, Yijie ^a   Hitzman, Charles ^b   Kamins, Theodore I ^a   Harris, James S ^a  

^a Stanford University   (United States)

^b STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDGAP BOWING; GAAS; PHOTOLUMINESCENCE INTENSITIES;

BUFFER LAYERS; ENERGY GAP; EPITAXIAL GROWTH; GALLIUM; GERMANIUM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PHOTOLUMINESCENCE; TIN;

TIN ALLOYS;

EID: 80855141644     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3658632     Document Type: Article

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