An experimental study of contact effects in organic thin film transistors

Journal of Applied Physics

Volumn 100, Issue 2, 2006, Pages

  Gundlach, D J ^a,c   Zhou, L ^a   Nichols, J A ^a,d   Jackson, T N ^a   Necliudov, P V ^b,e   Shur, M S ^b  

^a Pennsylvania State University   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^d 3M COMPANY   (United States)

^e INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT EFFECTS; GATED TRANSMISSION LINE MODEL (GATED-TLM); ORGANIC THIN FILM TRANSISTORS (OTFT); TOP CONTACT (TC);

ELECTRIC CHARGE; ELECTRIC LINES; ELECTRIC POTENTIAL; PALLADIUM COMPOUNDS; PARTICLE BEAM INJECTION;

THIN FILM TRANSISTORS;

EID: 33746782894     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2215132     Document Type: Article

References (66)

1. C. D. Dimitrakopoulos and P. R. L. Malenfant, Adv. Mater. (Weinheim, Ger.) 14, 99 (2002).
2. G. Horowitz, Adv. Mater. (Weinheim, Ger.) 10, 365 (1998).
3. D. J. Gundlach, Y. Y. Lin, T. N. Jackson, S. F. Nelson, and D. G. Schlom, IEEE Electron Device Lett. 18, 87 (1997).
4. D. J. Gundlach, H. Klauk, C. D. Sheraw, C.-C. Kuo, J.-R. Huang, and T. N. Jackson, Tech. Dig. - Int. Electron Devices Meet. 1999, 111.
5. P. Baude, D. A. Ender, M. A. Haas, T. W. Kelley, D. V. Muyres, and S. D. Theiss, Appl. Phys. Lett. 82, 3964 (2003).
6. C. D. Sheraw et al., Appl. Phys. Lett. 80, 1088 (2002).
7. M. G. Kane et al., IEEE Electron Device Lett. 21, 534 (2000).
8. F. Eder, H. Klauk, M. Halik, U. Zschieschang, G. Schmid, and C. Dehm, Appl. Phys. Lett. 84, 2673 (2004).
9. Y.-Y. Lin, D. J. Gundlach, and T. N. Jackson, Mater. Res. Soc. Symp. Proc. 413, 413 (1996).
10. F. Garnier, Chem. Phys. 227, 253 (1998).
11. D. J. Gundlach, L. L. Jia, and T. N. Jackson, IEEE Electron Device Lett. 22, 571 (2001).
12. R. Schroeder, L. A. Majewski, and M. Grell, Appl. Phys. Lett. 84, 1004 (2004).
13. S. M. Baier, N. C. Cirillo, Jr., S. A. Hanka, and M. S. Shur, U.S. Patent No. 4,638,341 (20 January 1987).
14. S. Luan and G. W. Neudeck, J. Appl. Phys. 72, 766 (1992).
15. P. V. Pesevanto, R. J. Chesterfield, C. R. Newman, and C. D. Frisbie, J. Appl. Phys. 96, 7312 (2004).
16. P. V. Necliudov, M. S. Shur, D. J. Gundlach, and T. N. Jackson, 2001 International Semiconductor Device Research Symposium Conference Digest, 2001, pp. 345-348.
17. D. J. Gundlach, Ph. D. thesis, Pennsylvania State University, 2001.
18. P. V. Necliudov, M. S. Shur, D. J. Gundlach, and T. N. Jackson, Solid-State Electron. 47, 259 (2003).
19. H. Klauk, G. Schnmid, W. Radlik, W. Weber, L. Zhou, C. D. Sheraw, J. A. Nichols, and T. N. Jackson, Solid-State Electron. 47, 297 (2003).
20. J. Zaumseil, K. W. Balwin, and J. A. Rogers, J. Appl. Phys. 93, 6117 (2003).
21. G. B. Blanchet, Y.-L. Loo, J. A. Rogers, F. Gao, and C. R. Fincher, Appl. Phys. Lett. 82, 463 (2003).
22. T. W. Kelley and C. D. Frisbie, J. Vac. Sci. Technol. B 18, 632 (2000);
23. K. Seshadri and C. D. Frisbie, Appl. Phys. Lett. 78, 993 (2001).
24. L. Bürgi, H. Sirringhaus, and R. H. Friend, Appl. Phys. Lett. 80, 2913 (2002).
25. J. A. Nichols, D. J. Gundlach, and T. N. Jackson, Appl. Phys. Lett. 83, 2366 (2003).
26. K. P. Puntambekar, P. V. Pesavento, and C. D. Frisbie, Appl. Phys. Lett. 83, 5539 (2003).
27. R. J. Chesterfield, J. C. Mckeen, C. R. Newman, C. D. Frisbie, P. C. Ewbank, K. R. Mann, and L. L. Miller, J. Appl. Phys. 95, 6396 (2004).
28. J. Takeya, C. Goldmann, S. Haas, K. P. Pernstich, B. Ketterer, and B. Batlogg, J. Appl. Phys. 94, 5800 (2003).
29. C. Goldmann, S. Haas, C. Krellner, K. P. Pernstich, D. J. Gundlach, and B. Batlogg, J. Appl. Phys. 96, 2080 (2004).
30. Y. Y. Lin, D. J. Gundlach, S. F. Nelson, and T. N. Jackson, IEEE Trans. Electron Devices 44, 1325 (1997).
31. Y. Y. Lin, D. J. Gundlach, S. F. Nelson, and T. N. Jackson, IEEE Electron Device Lett. 18, 606 (1997).
32. D. J. Gundlach, C. C. Kuo, S. F. Nelson, and T. N. Jackson, 57th Device Research Conference Digest, June 1999, pp. 164-165.
33. D. J. Gundlach, C.-C. Kuo, C. D. Sheraw, J. A. Nichols, and T. N. Jackson, Proc. SPIE 4466, 54 (2001).
34. D. Knipp, R. A. Street, A. Völkel, and J. Ho, J. Appl. Phys. 93, 347 (2002).
35. H. Klauk, D. J. Gundlach, J. A. Nichols, and T. N. Jackson, IEEE Trans. Electron Devices 20, 1258 (1999).
36. H. Klauk, J. R. Huang, J. A. Nichols, and T. N. Jackson, Thin Solid Films 366, 272 (2000).
37. D. J. Gundlach, Y.-Y. Lin, D. G. Schlom, and T. N. Jackson, Appl. Phys. Lett. 74, 3302 (1999).
38. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
39. D. Schroeder, Semiconductor Material and Device Characterization (Wiley, New York, 1990).
40. E. A. Silinsh and V. Čápek, Organic Molecular Crystals: Interaction, Localization, and Transport Phenomena (AIP, New York, 1994).
41. N. Koch, A. Kahn, J. Ghijsen, J.-J. Pireaux, J. Schwartz, R. L. Johnson, and A. Elschner, Appl. Phys. Lett. 82, 70 (2003).
42. P. G. Schroeder, D. B. France, J. B. Park, and B. A. Parkinson, J. Appl. Phys. 91, 3010 (2002).
43. N. J. Wilkins, L. Yan, and Y. Gao, Appl. Phys. Lett. 80, 4384 (2002).
44. D. J. Gundlach and T. N. Jackson (unpublished).
45. J. H. Kang and X.-Y. Zhu, Appl. Phys. Lett. 82, 3248 (2003).
46. N. Koch, A. Elschner, J. Schwartz, and A. Kahn, Appl. Phys. Lett. 82, 2281 (2003).
47. A. B. Chwang and C. D. Frisbie, J. Appl. Phys. 90, 1342 (2001).
48. R. A. Street and A. Salleo, Appl. Phys. Lett. 81, 2887 (2002).
49. GT=-20 V).
50. P. V. Necliudov, M. S. Shur, D. J. Gundlach, and T. N. Jackson, J. Appl. Phys. 88, 6594 (2000).
51. DS.
52. M. Shur and M. Hack, J. Appl. Phys. 55, 3831 (1984).
53. C.-C. S. Kuo and T. N. Jackson, 61st Device Research Conference Digest, June 2003.
54. J. Wang, D. J. Gundlach, C. C. Kuo, and T. N. Jackson, 41st Electronic Materials Conference Digest, June 1999, Vol. 16.
55. I. Kymissis, C. D. Dimitrakopoulos, and S. Purashothaman, IEEE Trans. Electron Devices 48, 1060 (2001).
56. T. Li, J. W. Balk, P. P. Ruden, I. H. Campbell, and D. L. Smith, J. Appl. Phys. 91, 4312 (2002).
57. A. Bolognesi, A. Di Carlo, and P. Lugli, Appl. Phys. Lett. 81, 4646 (2002).
58. T. Li, P. P. Ruden, I. H. Campbell, and D. L. Smith, J. Appl. Phys. 93, 4017 (2003).
59. I. G. Hill, Appl. Phys. Lett. 87, 163505 (2005).
60. V. I. Arkhipov, E. V. Emelianov, Y. H. Tak, and H. Bässler, J. Appl. Phys. 84, 848 (1998).
61. J. C. Scott and G. G. Malliaras, Chem. Phys. Lett. 299, 115 (1999).
62. J. C. Scott, J. Vac. Sci. Technol. A 21, 521 (2003).
63. L. Bürgi, T. J. Richards, R. H. Friend, and H. Sirringhaus, J. Appl. Phys. 94, 6129 (2003).
64. B. H. Hamadani and D. Natelson, J. Appl. Phys. 97, 064508 (2005);
65. Proc. IEEE 93, 1306 (2005).
66. J. Shaw and M. Hack, J. Appl. Phys. 65, 2124 (1989).