A three-mask-processed coplanar a-IGZO TFT with source and drain offsets

IEEE Electron Device Letters

Volumn 33, Issue 6, 2012, Pages 812-814

  Lee, Ung Gi ^a   Mativenga, Mallory ^a   Kang, Dong Han ^a   Jang, Jin ^a  

^a Kyung Hee University   (South Korea)

Author keywords

Amorphous indium gallium zinc oxide (a IGZO); coplanar; thin film transistor (TFT); top gate

Indexed keywords

ACTIVE-MATRIX DISPLAYS; AMORPHOUS INDIUM GALLIUM ZINC OXIDES (A IGZO); COPLANAR; EQUAL OFFSETS; FIELD-EFFECT MOBILITIES; ON/OFF CURRENT RATIO; SOURCE AND DRAINS; SWITCHING CHARACTERISTICS; THIN-FILM TRANSISTOR (TFTS); TOP GATE;

THIN FILM TRANSISTORS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84861712555     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2190260     Document Type: Article

References (15)

1. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors," Nature, vol. 432, no. 7016, pp. 488-492, Nov. 2004. (Pubitemid 39585210)
2. T. Kamiya and H. Hosono, "Material characteristics and applications of transparent amorphous oxide semiconductors," NPG Asia Mater., vol. 2, no. 1, pp. 15-22, Jan. 2010.
3. T. Kamiya, K. Nomura, and H. Hosono, "Present status of amorphous In-Ga-Zn-O thin-film transistors," Sci. Technol. Adv. Mater., vol. 11, no. 4, pp. 1-23, Sep. 2010.
4. D. Geng, D. H. Kang, and J. Jang, "High-performance amorphous indium-gallium-zinc-oxide thin-film transistor with a self-aligned etch stopper patterned by back-side UV exposure," IEEE Electron Device Lett., vol. 32, no. 6, pp. 758-760, Jun. 2011.
5. M. D. H. Chowdhury, P. Migliorato, and J. Jang, "Light induced instabilities in amorphous indium-gallium-zinc-oxide thin-film transistors," Appl. Phys. Lett., vol. 97, no. 17, p. 173 506, Oct. 2010.
6. M.Mativenga, J.W. Choi, J. H. Hur, H. J. Kim, and J. Jang, "Highly stable amorphous indium-gallium-zinc-oxide thin-film transistor using an etchstopper and a via-hole structure," J. Inf. Dis., vol. 12, no. 1, pp. 47-50, Jan. 2011.
7. M. Mativenga, M. H. Choi, D. H. Kang, and J. Jang, "High-performance drain-offset a-IGZO thin-film transistors," IEEE Electron Device Lett., vol. 32, no. 5, pp. 644-646, May 2011.
8. M. J. Seok, M. H. Choi, M. Mativenga, D. Geng, D. Y. Kim, and J. Jang, "A full-swing a-IGZO TFT based inverter with a top-gate-bias-induced depletion load," IEEE Electron Device Lett., vol. 32, no. 8, pp. 1089-1091, Aug. 2011.
9. D. H. Kang, I. Kang, S. H. Ryu, and J. Jang, "Self-aligned coplanar a-IGZO TFTs and application to high-speed circuits," IEEE Electron Device Lett., vol. 32, no. 10, pp. 1385-1387, Oct. 2011.
10. M. Kim, J. H. Jeong, H. J. Lee, T. K. Ahn, and H. S. Shin, "High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper," Appl. Phys. Lett., vol. 90, no. 21, p. 212 114, May 2007.
11. I. C. Lee and T. Y. Ma, "Turn-off current variation in drain-offset polysilicon thin film transistors drain offset," Thin Solid Films, vol. 461, no. 2, pp. 336-339, Aug. 2004.
12. H. K. Jang, C. E. Lee, and S. J. Noh, "Poly-Si thin film transistors with a source overlap and a drain offset: Leakage current characteristics, " Thin Solid Films, vol. 341, no. 1/2, pp. 148-151, Mar. 2004.
13. H. K. Jang, C. E. Lee, and S. J. Noh, "Poly-Si thin film transistors with a source overlap and a drain offset: Leakage current characteristics, " Thin Solid Films, vol. 341, no. 1/2, pp. 148-151, Mar. 2004.
14. Y. Shimura, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, "Specific contact resistances between amorphous oxide semiconductor In-Ga-Zn-O and metallic electrodes," Thin Sold Films, vol. 516, no. 17, pp. 5899-5902, Jul. 2008. (Pubitemid 351726028)
15. D. H. Lee, K. Kawamura, K. Nomura, T. Kamiya, and H. Hosono, "Large photoresponse in amorphous In-Ga-Zn-O and origin of reversible and slow decay," Electrochem. Solid-State Lett., vol. 13, no. 9, pp. H324-H327, Jul. 2010.