Amorphous In-Ga-Zn-O dual-gate TFTs: Current-voltage characteristics and electrical stress instabilities

IEEE Transactions on Electron Devices

Volumn 59, Issue 7, 2012, Pages 1928-1935

  Abe, Katsumi ^a,b   Takahashi, Kenji ^a   Sato, Ayumu ^a   Kumomi, Hideya ^a   Nomura, Kenji ^b   Kamiya, Toshio ^b   Kanicki, Jerzy ^c   Hosono, Hideo ^b  

^a CANON INC   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Amorphous In Ga Zn O (a IGZO) thin film transistor (TFT); coplanar homojunction; dual gate; electrical stability; operation model

Indexed keywords

DUAL GATES; ELECTRICAL STABILITY; HOMOJUNCTION; IN-GA-ZN-O; OPERATION MODEL;

AMORPHOUS FILMS; BIAS VOLTAGE; GALLIUM; STABILITY; THIN FILM TRANSISTORS; ZINC;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84862684034     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2195008     Document Type: Article

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