Improved stability of atomic layer deposited ZnO thin film transistor by intercycle oxidation

ETRI Journal

Volumn 34, Issue 2, 2012, Pages 280-283

  Oh, Himchan ^a   Park, Sang Hee Ko ^a   Ryu, Min Ki ^a   Hwang, Chi Sun ^a   Yang, Shinhyuk ^a   Kwon, Oh Sang ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Negative bias stress; Thin film transistor; ZnO

Indexed keywords

ATOMIC LAYER DEPOSITED; CHANNEL LAYERS; NEGATIVE BIAS; OXYGEN VACANCY CONCENTRATION; REACTIVE GAS; VOLTAGE SHIFT; WORKING PRESSURES; ZNO; ZNO LAYERS;

ATOMIC LAYER DEPOSITION; THIN FILM TRANSISTORS;

ZINC OXIDE;

EID: 84860151081     PISSN: 12256463     EISSN: 22337326     Source Type: Journal    
DOI: 10.4218/etrij.12.0211.0186     Document Type: Article

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