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Volumn 102, Issue 10, 2013, Pages

Electrical stability enhancement of the amorphous In-Ga-Zn-O thin film transistor by formation of Au nanoparticles on the back-channel surface

(4) Cho, Byungsu a,b Lee, Jaesang a Seo, Hyungtak c Jeon, Hyeongtag a

a Hanyang University (South Korea)

b Samsung Display Co (South Korea)

c Ajou University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS-INDIUM GALLIUM ZINC OXIDES; E BEAM EVAPORATION; ELECTRICAL INSTABILITY; ELECTRICAL STABILITY; ENHANCED STABILITY; LOCAL SURFACE PLASMONS; MANUFACTURING PROCESS; THICKNESS VARIATION;

AMORPHOUS SEMICONDUCTORS; GOLD ALLOYS; NANOPARTICLES; THIN FILM TRANSISTORS;

GOLD;

EID: 84875128557 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4795536 Document Type: Article

Times cited : (12)

References (13)

1
- 9744248669
- 10.1038/nature03090
- K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature (London) 432, 488 (2004). 10.1038/nature03090
- (2004) Nature (London) , vol.432 , pp. 488
- Nomura, K.¹ Ohta, H.² Takagi, A.³ Kamiya, T.⁴ Hirano, M.⁵ Hosono, H.⁶

2
- 78149382528
- 10.1088/1468-6996/11/4/044305
- T. Kamiya, K. Nomura, and H. Hosono, Sci. Technol. Adv. Mater. 11, 044305 (2010). 10.1088/1468-6996/11/4/044305
- (2010) Sci. Technol. Adv. Mater. , vol.11 , pp. 044305
- Kamiya, T.¹ Nomura, K.² Hosono, H.³

3
- 84861829395
- 10.1002/adma.201103228
- E. Fortunato, P. Barquinha, and R. Martins, Adv. Mater. 24, 2945 (2012). 10.1002/adma.201103228
- (2012) Adv. Mater. , vol.24 , pp. 2945
- Fortunato, E.¹ Barquinha, P.² Martins, R.³

4
- 79551552419
- 10.1109/TDMR.2010.2069561
- J. F. Conley, IEEE Trans. Device Mater. Reliab. 10, 460 (2010). 10.1109/TDMR.2010.2069561
- (2010) IEEE Trans. Device Mater. Reliab. , vol.10 , pp. 460
- Conley, J.F.¹

5
- 39749191514
- 10.1063/1.2838380
- J.-S. Park, J. K. Jeong, H.-J. Chung, Y.-G. Mo, and H. D. Kim, Appl. Phys. Lett. 92, 072104 (2008). 10.1063/1.2838380
- (2008) Appl. Phys. Lett. , vol.92 , pp. 072104
- Park, J.-S.¹ Jeong, J.K.² Chung, H.-J.³ Mo, Y.-G.⁴ Kim, H.D.⁵

6
- 70249130833
- 10.1149/1.3202383
- D. Stryakhilev, J.-S. Park, J. Lee, T. W. Kim, Y. S. Pyo, D. B. Lee, E. H. Kim, D. U. Jin, and Y.-G. Mo, Electrochem. Solid-State. Lett. 12, J101 (2009). 10.1149/1.3202383
- (2009) Electrochem. Solid-State. Lett. , vol.12 , pp. 101
- Stryakhilev, D.¹ Park, J.-S.² Lee, J.³ Kim, T.W.⁴ Pyo, Y.S.⁵ Lee, D.B.⁶ Kim, E.H.⁷ Jin, D.U.⁸ Mo, Y.-G.⁹

7
- 84862577180
- 10.1063/1.4709417
- G.-W. Chang, T.-C. Chang, J.-C. Jhu, T.-M. Tsai, Y.-E. Syu, K.-C. Chang, Y.-H. Tai, F.-Y. Jian, and Y.-C. Hung, Appl. Phys. Lett. 100, 182103 (2012). 10.1063/1.4709417
- (2012) Appl. Phys. Lett. , vol.100 , pp. 182103
- Chang, G.-W.¹ Chang, T.-C.² Jhu, J.-C.³ Tsai, T.-M.⁴ Syu, Y.-E.⁵ Chang, K.-C.⁶ Tai, Y.-H.⁷ Jian, F.-Y.⁸ Hung, Y.-C.⁹

8
- 79952687049
- 10.1063/1.3564882
- K. H. Ji, J. I. Kim, H. Y. Jung, S. Y. Park, R. Choi, U. K. Kim, C. S. Hwang, D. Lee, H. Hwang, and J. K. Jeong, Appl. Phys. Lett. 98, 103509 (2011). 10.1063/1.3564882
- (2011) Appl. Phys. Lett. , vol.98 , pp. 103509
- Ji, K.H.¹ Kim, J.I.² Jung, H.Y.³ Park, S.Y.⁴ Choi, R.⁵ Kim, U.K.⁶ Hwang, C.S.⁷ Lee, D.⁸ Hwang, H.⁹ Jeong, J.K.¹⁰

9
- 44249094185
- 10.1016/j.tsf.2007.10.051
- Y. Shimura, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, Thin Solid Films 516, 5899 (2008). 10.1016/j.tsf.2007.10.051
- (2008) Thin Solid Films , vol.516 , pp. 5899
- Shimura, Y.¹ Nomura, K.² Yanagi, H.³ Kamiya, T.⁴ Hirano, M.⁵ Hosono, H.⁶

10
- 79953844973
- 10.1063/1.3570641
- S. Y. Lee, D. H. Kim, E. Chong, Y. W. Jeon, and D. H. Kim, Appl. Phys. Lett. 98, 122105 (2011). 10.1063/1.3570641
- (2011) Appl. Phys. Lett. , vol.98 , pp. 122105
- Lee, S.Y.¹ Kim, D.H.² Chong, E.³ Jeon, Y.W.⁴ Kim, D.H.⁵

11
- 52949097961
- 10.1063/1.2990657
- J. K. Jeong, H. W. Yang, J. H. Jeong, Y.-G. Mo, and H. D. Kim, Appl. Phys. Lett. 93, 123508 (2008). 10.1063/1.2990657
- (2008) Appl. Phys. Lett. , vol.93 , pp. 123508
- Jeong, J.K.¹ Yang, H.W.² Jeong, J.H.³ Mo, Y.-G.⁴ Kim, H.D.⁵

12
- 28344457311
- 10.1063/1.2077834
- B. Balamurugan and T. Maruyama, Appl. Phys. Lett. 87, 143105 (2005). 10.1063/1.2077834
- (2005) Appl. Phys. Lett. , vol.87 , pp. 143105
- Balamurugan, B.¹ Maruyama, T.²

13
- 18644374770
- 10.1063/1.1855423
- D. M. Schaadt, B. Feng, and E. T. Yu, Appl. Phys. Lett. 86, 063106 (2005). 10.1063/1.1855423
- (2005) Appl. Phys. Lett. , vol.86 , pp. 063106
- Schaadt, D.M.¹ Feng, B.² Yu, E.T.³

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