Fabrication of Cu/Co bilayer gate electrodes using selective chemical vapor deposition and soft lithographic patterning

Journal of Applied Physics

Volumn 100, Issue 11, 2006, Pages

  Yang, H J ^a   Lee, J ^a   Kim, S ^a   Ko, Y K ^a   Shin, H J ^a   Lee, J G ^a   Kim, C ^a   Sung, M M ^b   Bang, H J ^c   Cho, B S ^d   Bae, Y H ^d   Lee, J H ^d   Kim, D H ^d   Jeong, C O ^d   Kim, S Y ^d   Lim, S K ^d  

^a Kookmin University   (South Korea)

^b Hanyang University   (South Korea)

^c ILLINOIS INSTITUTE OF TECHNOLOGY   (United States)

^d SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BILAYER GATE ELECTRODES; GLASS SUBSTRATE; MICROCONTACT PRINTING; OCTADECYLTRICHLOROSILANE (OTS);

CHEMICAL VAPOR DEPOSITION; COBALT; COPPER; ELECTRODES; GATES (TRANSISTOR); LAYERED MANUFACTURING; SELF ASSEMBLY;

MONOLAYERS;

EID: 33845800477     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2396796     Document Type: Article

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