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Volumn 1, Issue 14, 2013, Pages 2577-2584

Molecular precursor derived and solution processed indium-zinc oxide as a semiconductor in a field-effect transistor device. Towards an improved understanding of semiconductor film composition

(7) Hoffmann, Rudolf C a Kaloumenos, Mareiki a Heinschke, Silvio a Erdem, Emre b Jakes, Peter c Eichel, Rüdiger A c Schneider, Jörg J a

a DARMSTADT UNIVERSITY OF TECHNOLOGY (Germany)

b UNIVERSITY OF FREIBURG (Germany)

c FORSCHUNGSZENTRUM JÜLICH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BIXBYITE STRUCTURE; IMPEDANCE SPECTROSCOPY; INDIUM ZINC OXIDES; LINE BROADENING; MOLECULAR PRECURSOR; SEMICONDUCTOR FILMS; SOLUTION PROCESS; SOLUTION-PROCESSED;

AMORPHOUS FILMS; CALCINATION; FIELD EFFECT TRANSISTORS; INDIUM; NANOCRYSTALLITES; RAPID THERMAL PROCESSING; ZINC; ZINC COMPOUNDS; ZINC OXIDE;

SEMICONDUCTING INDIUM;

EID: 84876895281 PISSN: 20507534 EISSN: 20507526 Source Type: Journal
DOI: 10.1039/c3tc00841j Document Type: Article

Times cited : (34)

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