Low-temperature soluble InZnO thin film transistors by microwave annealing

Journal of Crystal Growth

Volumn 326, Issue 1, 2011, Pages 23-27

  Song, Keunkyu ^a   Chang, Young Koo ^a   Jun, Taehwan ^a   Lee, Daehee ^a   Jeong, Youngmin ^a   Moon, Jooho ^a  

^a Yonsei University   (South Korea)

Author keywords

A1. Microwave annealing; B1. Zinc compounds; B2. Oxide semiconducting materials; B3. Field effect transistors

Indexed keywords

ACTIVE LAYER; B1. ZINC COMPOUNDS; B2. OXIDE SEMICONDUCTING MATERIALS; DEVICE CHARACTERISTICS; FIELD EFFECTS; FLEXIBLE DEVICE; HIGH PERFORMANCE APPLICATIONS; INDIUM ZINC OXIDES; LOW TEMPERATURES; MICROWAVE ANNEALING; ON/OFF CURRENT RATIO; OXIDE SEMICONDUCTOR; PROCESSABLE; SOLUTION-PROCESSED; SUBTHRESHOLD SLOPE;

ANNEALING; FIELD EFFECT TRANSISTORS; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INDIUM; IRRADIATION; MICROWAVE HEATING; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; ZINC; ZINC COMPOUNDS; ZINC OXIDE;

MICROWAVE IRRADIATION;

EID: 79960155950     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.01.044     Document Type: Conference Paper

References (26)

1. S.R. Forrest Nature 428 2004 911
2. N. Stutzman, R.H. Friend, and H. Sirringhaus Science 299 2003 1881
3. C.D. Dimitrakopoulos, S. Purushothaman, J. Kymissis, A. Callegari, and J.M. Shaw Science 283 1999 822
4. C.D. Dimitrakopoluos, and P.R.L. Malefant Adv. Mater. 14 2002 99
5. G. Gu, M.G. Kane, J.E. Doty, and A.H. Firester Appl. Phys. Lett. 87 2005 243512
6. T. Sekitani, S. Iba, Y. Kato, Y. Noguchi, T. Someya, and T. Sakurai Appl. Phys. Lett. 87 2005 073505
7. A. Salleo, F. Endicott, and R.A. Street Appl. Phys. Lett. 86 2005 263505
8. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono Nature 432 2004 488
9. B. Wang, M.J. Callahan, C. Xu, L.O. Bouthillette, N.C. Giles, and D.F. Bliss J. Cryst. Growth 304 2007 73
10. Y.H. Yang, S.S. Yang, C.Y. Kao, and K.S. Chou IEEE Electron Device Lett. 31 2010 329
11. K. Song, D. Kim, X.-S. Li, T. Jun, Y. Jeong, and J. Moon J. Mater. Chem. 19 2009 8861
12. S. Jeong, Y. Jeong, and J. Moon J. Phys. Chem. C 112 2008 11082
13. Y.-J. Chang, D.-H. Lee, G.S. Herman, and C.-H. Chang Electrochem. Solid State Lett. 10 2007 H135
14. B.S. Ong, C. Li, Y. Li, Y. Wu, and R. Loutfy J. Am. Chem. Soc. 129 2007 2750
15. C.Y. Koo, K. Song, T. Jun, D. Kim, Y. Jeong, S.H. Kim, J. Ha, and J. Moon J. Electrochem. Soc. 157 2010 J111
16. S. Meyers, J. Anderson, C. Hung, J. Thompson, H. Wager, and D. Keszler J. Am. Chem. Soc. 130 2008 17603
17. K. Song, J. Noh, T. Jun, Y. Jung, H.Y. Kang, and J. Moon Adv. Mater. 22 2010 4308
18. T. Jun, K. Song, Y. Jeong, K. Woo, D. Kim, C. Bae, and J. Moon J. Mater. Chem. 21 2011 1102
19. K.J. Rao, B. Vaidhyanathan, M. Ganguli, and P.A. Ramakrishnan Chem. Mater. 11 1999 882
20. F. Wiesbrock, R. Hoogenboom, and U.S. Schubert Macromol. Rapid Commun. 25 2004 1739
21. E.T. Thostenson, and T.-W. Chou Compos. Part AAppl. Sci. Manuf. 30 1999 1055
22. C.C. Landry, and A.R. Barron Science 260 1993 1653
23. K.J. Rao, B. Vaidhyanathan, M. Ganguli, and P.A. Ramakrishnan Chem. Mater. 11 1999 882
24. K.E. Haque Int. J. Miner. Process. 57 1999 1
25. J.H. Ahn, J.N. Lee, Y.C. Kim, and B.T. Ahn Curr. Appl. Phys. 2 2002 135
26. C.R. Kagan, and P. Andry Thin-Film Transistors 2003 Marcel Dekker New York