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Journal of Materials Chemistry C

Volumn 2, Issue 6, 2014, Pages 1050-1056

Solution-processed amorphous hafnium-lanthanum oxide gate insulator for oxide thin-film transistors

(7) Ko, Jieun a Kim, Joohee a Park, Si Yun a Lee, Eungkyu a Kim, Kyongjun a Lim, Keon Hee a Kim, Youn Sang a

a Seoul National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL PERMITTIVITY; HIGH DIELECTRIC CONSTANTS; LOW-LEAKAGE CURRENT; ON/OFF CURRENT RATIO; OXIDE THIN-FILM TRANSISTORS; OXIDE THINFILM TRANSISTORS (TFTS); SPIN-COATING METHOD; STABLE PERFORMANCE;

DIELECTRIC MATERIALS; ELECTRIC INSULATORS; HAFNIUM; LANTHANUM OXIDES; OXIDE FILMS;

THIN FILM TRANSISTORS;

EID: 84892689210 PISSN: 20507534 EISSN: 20507526 Source Type: Journal
DOI: 10.1039/c3tc31727g Document Type: Article

Times cited : (67)

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