Ultrafast characterization of phase-change material crystallization properties in the melt-quenched amorphous phase

Nano Letters

Volumn 14, Issue 6, 2014, Pages 3419-3426

  Jeyasingh, Rakesh ^a,c   Fong, Scott W ^a   Lee, Jaeho ^a   Li, Zijian ^a   Chang, Kuo Wei ^b   Mantegazza, Davide ^b   Asheghi, Mehdi ^a   Goodson, Kenneth E ^a   Wong, H S Philip ^a  

^a Stanford University   (United States)

^b INTEL CORPORATION   (United States)

^c Intel Corporation ^*  (United States)

Author keywords

Arrhenius Behavior; Crystallization; Fragility; Growth Velocity; Nonvolatile; Nucleation; Phase Change Memory

Indexed keywords

CRYSTALLIZATION; GERMANIUM; HEATING RATE; NUCLEATION; PHASE CHANGE MATERIALS; PHASE CHANGE MEMORY; PHASE TRANSITIONS;

ARRHENIUS BEHAVIORS; CRYSTALLIZATION DYNAMICS; CRYSTALLIZATION PROPERTIES; FRAGILITY; GROWTH VELOCITY; NON-VOLATILE; PHASE CHANGE MEMORY (PCM); TEMPERATURE CONTROL METHODS;

ELECTRIC PROPERTIES;

EID: 84902248155     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl500940z     Document Type: Article

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