Evidence for non-arrhenius kinetics of crystallization in phase change memory devices

IEEE Transactions on Electron Devices

Volumn 60, Issue 11, 2013, Pages 3767-3774

  Ciocchini, Nicola ^a   Cassinerio, Marco ^a   Fugazza, Davide ^b   Ielmini, Daniele ^a  

^a POLITECNICO DI MILANO   (Italy)

^b INTEL CORPORATION   (United States)

Author keywords

Crystallization; phase change memory (PCM); phase transition; reliability modeling; threshold switching

Indexed keywords

KINETICS OF CRYSTALLIZATION; NON-ARRHENIUS KINETICS; PHASE CHANGE MEMORY (PCM); PROGRAMMING SPEED; RELIABILITY MODEL; TEMPERATURE DEPENDENCE; THRESHOLD SWITCHING; WIDE TEMPERATURE RANGES;

ACTIVATION ENERGY; CRYSTALLIZATION; KINETICS; PHASE CHANGE MATERIALS; PHASE TRANSITIONS;

CRYSTALLIZATION KINETICS;

EID: 84887226721     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2282637     Document Type: Article

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