Interfacial phase-change memory

Nature Nanotechnology

Volumn 6, Issue 8, 2011, Pages 501-505

  Simpson, R E ^a   Fons, P ^a,b   Kolobov, A V ^a,b   Fukaya, T ^a   Krbal, M ^a   Yagi, T ^c   Tominaga, J ^a  

^a National Institute of Applied Industrial Science and Technology   (Japan)

^b JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; FLASH MEMORY; GERMANIUM COMPOUNDS; OPTICAL PROPERTIES; PHASE CHANGE MATERIALS; SWITCHING; VIRTUAL STORAGE;

DATA STORAGE DEVICES; DEVICE ARCHITECTURES; ELECTRICAL AND OPTICAL PROPERTIES; PHASE CHANGE PROCESS; PHASE-CHANGE MEMORY TECHNOLOGIES; SUPER-LATTICE STRUCTURES; SUPERLATTICE LAYERS; THREE ORDERS OF MAGNITUDE;

PHASE CHANGE MEMORY;

ANTIMONY; GERMANIUM; TELLURIUM;

ARTICLE; COVALENT BOND; DEVICE; ENERGY; ENTROPY; HEATING; LASER; PRIORITY JOURNAL; TECHNOLOGY;

EID: 79961206937     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2011.96     Document Type: Article

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