SCOPUS 정보 검색 플랫폼

Volumn 110, Issue 11, 2011, Pages

Crystallization properties and their drift dependence in phase-change memory studied with a micro-thermal stage

(7) Ahn, Chiyui a Lee, Byoungil a Jeyasingh, Rakesh G D a Asheghi, Mehdi a Hurkx, G A M b Goodson, Kenneth E a Philip Wong, H S a

a Stanford University (United States)

b NXP TSMC Research Center (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS VOLUMES; ANNEALING TEMPERATURES; ARRHENIUS PARAMETERS; CRYSTALLINE FILAMENTS; CRYSTALLIZATION PROPERTIES; CRYSTALLIZATION TIME; DELAY TIME; INTERMEDIATE RESISTANCE; MULTI-BITS; PHASE CHANGES; RETENTION CHARACTERISTICS; THERMAL DISTURBANCE; TIME-SCALES;

RECRYSTALLIZATION (METALLURGY);

PHASE CHANGE MEMORY;

EID: 84859356040 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3667295 Document Type: Article

Times cited : (16)

References (18)

1
- 4544355253
- (Washington, DC, Dec. 8-10),.
- S. Lai, IEEE International Electron Devices Meeting (Washington, DC, Dec. 8-10, 2003), p. 255.
- (2003) IEEE International Electron Devices Meeting , pp. 255
- Lai, S.¹

2
- 84859295355
- IEEE, International Electron Devices Meeting (San Francisco, CA, Dec. 11-13),.
- Y. C. Chen, C. T. Rettner, S. Raoux, G. W. Burr, S. H. Chen, R. M. Shelby, M. Salinga, W. P. Risk, T. D. Happ, G. M. McClelland, M. Breitwisch, A. Schrott, J. B. Philipp, M. H. Lee, R. Cheek, T. Nirschl, M. Lamorey, C. F. Chen, E. Joseph, S. Zaidi, B. Yee, H. L. Lung, R. Bergmann, and C. Lam, IEEE International Electron Devices Meeting IEEE, International Electron Devices Meeting (San Francisco, CA, Dec. 11-13, 2006), p. 346910.
- (2006) IEEE International Electron Devices Meeting , pp. 346910
- Chen, Y.C.¹ Rettner, C.T.² Raoux, S.³ Burr, G.W.⁴ Chen, S.H.⁵ Shelby, R.M.⁶ Salinga, M.⁷ Risk, W.P.⁸ Happ, T.D.⁹ McClelland, G.M.¹⁰ Breitwisch, M.¹¹ Schrott, A.¹² Philipp, J.B.¹³ Lee, M.H.¹⁴ Cheek, R.¹⁵ Nirschl, T.¹⁶ Lamorey, M.¹⁷ Chen, C.F.¹⁸ Joseph, E.¹⁹ Zaidi, S.²⁰ more..

3
- 47249119179
- (Kyoto, Japan, June 12-16),.
- M. Breitwisch, T. Nirschl, C. F. Chen, Y. Zhu, M. H. Lee, M. Lamorey, G. W. Burr, E. Joseph, A. Schrott, J. B. Philipp, R. Cheek, T. D. Happ, S. H. Chen, S. Zaidr, P. Flaitz, J. Bruley, R. Dasaka, B. Rajendran, S. Rossnage, M. Yang, Y. C. Chen, R. Bergmann, H. L. Lung, and C. Lam, IEEE Symposium on VLSI Technology (Kyoto, Japan, June 12-16, 2007), p. 100.
- (2007) IEEE Symposium on VLSI Technology , pp. 100
- Breitwisch, M.¹ Nirschl, T.² Chen, C.F.³ Zhu, Y.⁴ Lee, M.H.⁵ Lamorey, M.⁶ Burr, G.W.⁷ Joseph, E.⁸ Schrott, A.⁹ Philipp, J.B.¹⁰ Cheek, R.¹¹ Happ, T.D.¹² Chen, S.H.¹³ Zaidr, S.¹⁴ Flaitz, P.¹⁵ Bruley, J.¹⁶ Dasaka, R.¹⁷ Rajendran, B.¹⁸ Rossnage, S.¹⁹ Yang, M.²⁰ more..

4
- 33947243961
- Intrinsic data retention in nanoscaled phase-change memories - Part I: Monte Carlo model for crystallization and percolation
- DOI 10.1109/TED.2006.885527
- U. Russo, D. Ielmini, A. Redaelli, and A. L. Lacaita, IEEE Trans. Electron Devices 53, 3032 (2006). 10.1109/TED.2006.885527 (Pubitemid 46417117)
- (2006) IEEE Transactions on Electron Devices , vol.53 , Issue.12 , pp. 3032-3039
- Russo, U.¹ Ielmini, D.² Redaelli, A.³ Lacaita, A.L.⁴

5
- 79952021846
- 10.1109/TED.2010.2095502
- S. Kim, B. Lee, M. Asheghi, G. A. M. Hurkx, J. Reifenberg, K. Goodson, and H.-S. P. Wong, IEEE Trans. Electron Devices 58, 584 (2011). 10.1109/TED.2010.2095502
- (2011) IEEE Trans. Electron Devices , vol.58 , pp. 584
- Kim, S.¹ Lee, B.² Asheghi, M.³ Hurkx, G.A.M.⁴ Reifenberg, J.⁵ Goodson, K.⁶ Wong, H.-S.P.⁷

6
- 84859306106
- Ph.D. dissertation (Stanford University).
- S. Meister., In-Situ TEM Study of Nanoscale Phase Change Memory Cells. Ph.D. dissertation (Stanford University, 2010).
- (2010) Situ TEM Study of Nanoscale Phase Change Memory Cells
- Meister, S.¹

7
- 67349217820
- 10.1016/j.mee.2009.03.085
- D. Ielmini, M. Boniardi, A. L. Lacaita, A. Redaelli, and A. Pirovano, Microelectron. Eng. 86, 1942 (2009). 10.1016/j.mee.2009.03.085
- (2009) Microelectron. Eng. , vol.86 , pp. 1942
- Ielmini, D.¹ Boniardi, M.² Lacaita, A.L.³ Redaelli, A.⁴ Pirovano, A.⁵

8
- 16244410161
- Low-cost and nanoscale non-volatile memory concept for future silicon chips
- DOI 10.1038/nmat1350
- M. H. R. Lankhorst, W. S. M. M. Ketelaars, and R. A. M. Wolters, Nature Mater. 4, 347 (2005). 10.1038/nmat1350 (Pubitemid 40450216)
- (2005) Nature Materials , vol.4 , Issue.4 , pp. 347-352
- Lankhorst, M.H.R.¹ Ketelaars, B.W.S.M.M.² Wolters, R.A.M.³

9
- 59849127367
- (Washington, DC, Dec. 10-12),.
- D. Tio Castro, L. Goux, G. A. M. Hurkx, K. Attenborough, R. Delhougne, J. Lisoni, F. J. Jedema, M. A. A. in't Zandt, R. A. M. Wolters, D. J. Gravesteijn, M. A. Verheijen, M. Kaiser, R. G. R. Weemaes, and D. J. Wouters, IEEE International Electron Devices Meeting (Washington, DC, Dec. 10-12, 2007), p. 315.
- (2007) IEEE International Electron Devices Meeting , pp. 315
- Tio Castro, D.¹ Goux, L.² Hurkx, G.A.M.³ Attenborough, K.⁴ Delhougne, R.⁵ Lisoni, J.⁶ Jedema, F.J.⁷ In'T Zandt, M.A.A.⁸ Wolters, R.A.M.⁹ Gravesteijn, D.J.¹⁰ Verheijen, M.A.¹¹ Kaiser, M.¹² Weemaes, R.G.R.¹³ Wouters, D.J.¹⁴

10
- 45149123944
- 10.1063/1.2931951
- A. Redaelli, A. Pirovano, A. Benvenuti, and A. L. Lacaita, J. Appl. Phys. 103, 111101 (2008). 10.1063/1.2931951
- (2008) J. Appl. Phys. , vol.103 , pp. 111101
- Redaelli, A.¹ Pirovano, A.² Benvenuti, A.³ Lacaita, A.L.⁴

11
- 18644386647
- 5 films
- DOI 10.1063/1.1503166
- G. Ruitenberg, A. K. Petford-Long, and R. C. Doole, J. Appl. Phys. 92, 3116 (2002). 10.1063/1.1503166 (Pubitemid 35209243)
- (2002) Journal of Applied Physics , vol.92 , Issue.6 , pp. 3116
- Ruitenberg, G.¹ Petford-Long, A.K.² Doole, R.C.³

12
- 84991374544
- (Washington, DC, Dec. 10-12),.
- T. Nirschl, J. B. Phipp, T. D. Happ, G. W. Burr, B. Rajendran, M. H. Lee, A. Schrott, M. Yang, M. Breitwisch, C. F. Chen, E. Joseph, M. Lamorey, R. Cheek, S. H. Chen, S. Zaidi, S. Raoux, Y. C. Chen, Y. Zhu, R. Bergmann, H. L. Lung, and C. Lam, IEEE International Electron Devices Meeting (Washington, DC, Dec. 10-12, 2007), p. 461.
- (2007) IEEE International Electron Devices Meeting , pp. 461
- Nirschl, T.¹ Phipp, J.B.² Happ, T.D.³ Burr, G.W.⁴ Rajendran, B.⁵ Lee, M.H.⁶ Schrott, A.⁷ Yang, M.⁸ Breitwisch, M.⁹ Chen, C.F.¹⁰ Joseph, E.¹¹ Lamorey, M.¹² Cheek, R.¹³ Chen, S.H.¹⁴ Zaidi, S.¹⁵ Raoux, S.¹⁶ Chen, Y.C.¹⁷ Zhu, Y.¹⁸ Bergmann, R.¹⁹ Lung, H.L.²⁰ Lam, C.²¹ more..

13
- 77950083056
- 10.1109/LED.2010.2042273
- D. Mantegazza, D. Ielmini, A. Pirovano, and A. L. Lacaita, IEEE Electron Device Lett. 31, 341 (2010). 10.1109/LED.2010.2042273
- (2010) IEEE Electron Device Lett. , vol.31 , pp. 341
- Mantegazza, D.¹ Ielmini, D.² Pirovano, A.³ Lacaita, A.L.⁴

14
- 0000631864
- W. Meyer and H. Neldel, Z. Tech. Phys. (Liepzig) 12, 588 (1937).
- (1937) Z. Tech. Phys. (Liepzig) , vol.12 , pp. 588
- Meyer, W.¹ Neldel, H.²

15
- 27944502232
- 10.1103/PhysRevB.46.12244
- A. Yelon, B. Movaghar, and H. M. Branz, Phys. Rev. B 46, 12244 (1992). 10.1103/PhysRevB.46.12244
- (1992) Phys. Rev. B , vol.46 , pp. 12244
- Yelon, A.¹ Movaghar, B.² Branz, H.M.³

16
- 33847607700
- Intrinsic data retention in nanoscaled phase-change memories - Part II: Statistical analysis and prediction of failure time
- DOI 10.1109/TED.2006.885525
- A. Redaelli, D. Ielmini, U. Russo, and A. Lacaita, IEEE Trans. Electron Devices 53 3040 (2006). 10.1109/TED.2006.885525 (Pubitemid 46417118)
- (2006) IEEE Transactions on Electron Devices , vol.53 , Issue.12 , pp. 3040-3046
- Redaelli, A.¹ Ielmini, D.² Russo, U.³ Lacaita, A.L.⁴

17
- 11144230051
- Reliability study of phase-change nonvolatile memories
- DOI 10.1109/TDMR.2004.836724
- A. Pirovano, A. Redaelli, F. Pellizzer, F. Ottogalli, M. Tosi, D. Ielmini, A.L. Lacaita, and R. Bez, IEEE Trans. Device Mater. Reliab. 4, 422 (2004). 10.1109/TDMR.2004.836724 (Pubitemid 40049420)
- (2004) IEEE Transactions on Device and Materials Reliability , vol.4 , Issue.3 , pp. 422-426
- Pirovano, A.¹ Redaelli, A.² Pellizzer, F.³ Ottogalli, F.⁴ Tosi, M.⁵ Ielmini, D.⁶ Lacaita, A.L.⁷ Bez, R.⁸

18
- 50249177041
- (Washington, DC, Dec. 10-12),.
- D. Ielmini, S. Lavizzari, D. Sharma, and A. Lacaita, IEEE International Electron Devices Meeting (Washington, DC, Dec. 10-12, 2007), p. 939.
- (2007) IEEE International Electron Devices Meeting , pp. 939
- Ielmini, D.¹ Lavizzari, S.² Sharma, D.³ Lacaita, A.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.