Incomplete filament crystallization during set operation in PCM cells

IEEE Electron Device Letters

Volumn 31, Issue 4, 2010, Pages 341-343

  Mantegazza, Davide ^a,b   Ielmini, Daniele ^a   Pirovano, Agostino ^c,d   Lacaita, Andrea L ^a  

^a POLITECNICO DI MILANO   (Italy)

^b INTEL CORPORATION   (United States)

^c STMICROELECTRONICS   (Italy)

^d Nonvolatile Memory and Technology Development Numonyx   (Italy)

Author keywords

Chalcogenide materials; Multilevel cell; Nonvolatile memories; Phase change memories (PCMs); Threshold switching

Indexed keywords

AMORPHOUS CELL; AMORPHOUS VOLUMES; CHALCOGENIDE MATERIALS; CRYSTALLINE FILAMENTS; ELECTRICAL PERFORMANCE; EXPERIMENTAL EVIDENCE; IN-PHASE; MULTILEVEL CELL; NON-VOLATILE MEMORIES; PHASE DISTRIBUTION; SET OPERATION; SET PROGRAMMING; THRESHOLD SWITCHING;

CRYSTALLINE MATERIALS; FILAMENTS (LAMP); PULSE CODE MODULATION;

PHASE CHANGE MEMORY;

EID: 77950083056     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2042273     Document Type: Article

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