Growth rate determination through automated TEM image analysis: Crystallization studies of doped SbTe phase-change thin films

Microscopy and Microanalysis

Volumn 16, Issue 3, 2010, Pages 291-299

  Oosthoek, Jasper L M ^a   Kooi, Bart J ^a   De Hosson, Jeff T M ^a   Wolters, Rob A M ^b   Gravesteijn, Dirk J ^b   Attenborough, Karen ^c  

^a UNIVERSITY OF GRONINGEN   (Netherlands)

^b NXP TSMC Research Center   (Netherlands)

^c NXP TSMC Research Center   (Belgium)

Author keywords

amorphous crystalline interface; blanket layer; crystallization; doped SbTe; growth rate; image processing; in situ heating; phase change material; PRAM; TEM

Indexed keywords

EID: 77957233599     PISSN: 14319276     EISSN: 14358115     Source Type: Journal    
DOI: 10.1017/S1431927610000176     Document Type: Article

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