Crystallization behavior and physical properties of Sb-excess Ge 2Sb2+xTe5 thin films for Phase Change Memory (PCM) devices

Journal of the Electrochemical Society

Volumn 153, Issue 3, 2006, Pages

  Ryu, S O ^a   Yoon, S M ^a   Choi, K J ^a   Lee, N Y ^a   Park, Y S ^a   Lee, S Y ^a   Yu, B G ^a   Park, J B ^b   Shin, W C ^b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; CRYSTALLIZATION; ELECTROCHEMISTRY; GERMANIUM COMPOUNDS; MELTING; STOICHIOMETRY;

GE2 SB2+X TE5; PHASE CHANGE MEMORY (PCM) DEVICES;

THIN FILMS;

EID: 32044444294     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2164768     Document Type: Article

References (5)

1. S. Tyson, G. Wicker, T. Lowrey, and S. Hudgens, Proceedings of Aerospace Conference, 385 (2000).
2. H. Horii, J. H. Park, Y. H. Ha, I. G. Baek, S. O. Park, Y. N. Hwang, S. H. Lee, Y. T. Kim, K. H. Lee, U-In Chung, and J. T. Moon, Proceedings of Symposium on VLSI Technology Digest of Technical Papers 79, 4213 (2003).
3. S. G. Alberici, R. Zonca, and B. Pashmakov, Appl. Surf. Sci., 231-232, 821 (2004).
4. N. Yamada, K. Nishiuchi, S. Sanai, K. Nagata, M. Takao, and N. Akahira, National Technical Report (Matsushita Electric Industry Co.) 35, 110 (1989).
5. G. F. Zhou, H. J. Borg, J. C. N. Rijpers, M. H. R. Lankhorst, and J. J. L. Horikx, Proc. SPIE, 4090, 108 (2000).