Study of cycling-induced parameter variations in phase change memory cells

IEEE Electron Device Letters

Volumn 34, Issue 7, 2013, Pages 882-884

  Boniardi, Mattia ^a   Redaelli, Andrea ^a   Ghetti, Andrea ^a   Lacaita, Andrea L ^b,c  

^a Process RandD   (Italy)

^b POLITECNICO DI MILANO   (Italy)

^c CNR   (Italy)

Author keywords

Crystallization kinetics; endurance; phase change memory (PCM)

Indexed keywords

CELL PARAMETER; IN-PHASE; PEAK TEMPERATURES; PHASE CHANGE MEMORY (PCM); THERMAL PARAMETERS;

DURABILITY; ELECTRON DEVICES; ELECTRONICS ENGINEERING;

CRYSTALLIZATION KINETICS;

EID: 84880060317     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2261859     Document Type: Article

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