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Volumn 98, Issue 12, 2011, Pages

The crystallization behavior of stoichiometric and off-stoichiometric Ga-Sb-Te materials for phase-change memory

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SAMPLES; CRYSTALLIZATION BEHAVIOR; CRYSTALLIZATION TEMPERATURE; GA-SB-TE; HIGHER T; NON-STOICHIOMETRIC COMPOUNDS; OFF-STOICHIOMETRIC COMPOUNDS; PHASE CHANGES; RECRYSTALLIZATION TIME;

EID: 79953873178     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3570636     Document Type: Article
Times cited : (47)

References (13)
  • 1
    • 26444458840 scopus 로고    scopus 로고
    • 1058-4587, 10.1080/10584580490893277
    • K. Kim and S. Y. Lee, Integr. Ferroelectr. 1058-4587 64, 3 (2004). 10.1080/10584580490893277
    • (2004) Integr. Ferroelectr. , vol.64 , pp. 3
    • Kim, K.1    Lee, S.Y.2
  • 5
  • 12
    • 0022130530 scopus 로고
    • 0261-8028, 10.1007/BF00720441
    • M. H. B. Stiddard, J. Mater. Sci. Lett. 0261-8028 4, 1157 (1985). 10.1007/BF00720441
    • (1985) J. Mater. Sci. Lett. , vol.4 , pp. 1157
    • Stiddard, M.H.B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.