Resistance and threshold switching voltage drift behavior in phase-change memory and their temperature dependence at microsecond time scales studied using a micro-thermal stage

IEEE Transactions on Electron Devices

Volumn 58, Issue 3, 2011, Pages 584-592

  Kim, Sangbum ^a   Lee, Byoungil ^b   Asheghi, Mehdi ^b   Hurkx, Fred ^c   Reifenberg, John P ^d   Goodson, Kenneth E ^b   Wong, H S Philip ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b STANFORD UNIVERSITY   (United States)

^c NXP TSMC Research Center   (Belgium)

^d INTEL CORPORATION   (United States)

Author keywords

Nonvolatile memory; phase change memory (PCM); resistance drift; threshold switching

Indexed keywords

ANALYTICAL EXPRESSIONS; ANNEALING TEMPERATURES; CLOSE PROXIMITY; DRIFT COEFFICIENT; DRIFT MODEL; IN-PHASE; NON-VOLATILE MEMORIES; PHASE-CHANGE MEMORY (PCM); RESISTANCE DRIFT; TEMPERATURE DEPENDENCE; TEMPERATURE-DEPENDENT MEASUREMENTS; THERMAL DISTURBANCE; THERMAL STAGE; THRESHOLD SWITCHING; TIME VARYING; TIME-SCALES;

ANNEALING; BEHAVIORAL RESEARCH; PLATINUM; SWITCHING; TEMPERATURE DISTRIBUTION;

PHASE CHANGE MEMORY;

EID: 79952021846     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2095502     Document Type: Article

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