Highly productive PCRAM technology platform and full chip operation: Based on 4F 2 (84nm pitch) cell scheme for 1 Gb and beyond

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2011, Pages

  Lee, S H ^a   Park, H C ^a   Kim, M S ^a   Kim, H W ^a,a   Choi, M R ^a   Lee, H G ^a   Seo, J W ^a   Kim, S C ^a   Kim, S G ^a   Hong, S B ^a   Lee, S Y ^a   Lee, J U ^a   Kim, Y S ^a   Kim, K S ^a   Kim, J I ^a   Lee, M Y ^a   Shin, H S ^a,a   Chae, S J ^a   Song, J H ^a   Yoon, H S ^a   Oh, J M ^a   Min, S K ^a   Lee, H M ^a   Hong, K R ^a   Cheong, J T ^a   Park, S N ^a   Ku, J C ^a   Sohn, Y S ^a   Park, S K ^a   Kim, T S ^a   Kim, Y K ^a   Park, K W ^a   Han, C S ^a   Kim, W ^a   Kim, H J ^a   Choi, K S ^a   Lee, J H ^a   Hong, S J ^a   more..

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHIP SIZES; DEVICE FUNCTIONALITY; FULLY INTEGRATED; TECHNOLOGY PLATFORMS; TECHNOLOGY-BASED;

ELECTRON DEVICES;

EID: 84863022718     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2011.6131480     Document Type: Conference Paper

References (3)

1. S.H. Lee, et al., Symp. on VLSI Tech, pp.199-200 (2010).
2. G. Servalli, et al., IEDM Tech. Dig, pp.113-116 (2009).
3. R. Annunziata, et al., IEDM Tech. Dig, pp.97-100 (2009).