Analysis of interface states and series resistance for Al/PVA: N-CdS nanocomposite metal-semiconductor and metal-insulator-semiconductor diode structures

Applied Physics A: Materials Science and Processing

Volumn 113, Issue 2, 2013, Pages 491-499

  Sharma, Mamta ^a   Tripathi, S K ^a  

^a PANJAB UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTIVE BARRIER HEIGHTS; ELECTRICAL CHARACTERISTIC; ELECTRICAL PARAMETER; ENERGY DENSITY DISTRIBUTIONS; FABRICATION AND CHARACTERIZATIONS; INTERFACIAL INSULATOR LAYER; METAL SEMICONDUCTORS; METAL-INSULATOR-SEMICONDUCTOR DIODES;

CADMIUM SULFIDE; ELECTRIC RESISTANCE; INTERFACE STATES; MIS DEVICES;

SEMICONDUCTOR DIODES;

EID: 84900665131     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-013-7552-3     Document Type: Article

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