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Materials Science and Engineering: B

Volumn 87, Issue 2, 2001, Pages 141-147

Interface states density distribution in Au/n-GaAs Schottky diodes on n-Ge and n-GaAs substrates

(2) Hudait, M K a,b Krupanidhi, S B a

a INDIAN INSTITUTE OF SCIENCE (India)

b Ohio State University (United States)

Author keywords

Capacitance voltage (C V); Current voltage (I V); Schottky diodes

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

INTERFACE STATES DENSITY;

SCHOTTKY BARRIER DIODES;

EID: 0035889450 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(01)00713-9 Document Type: Article

Times cited : (97)

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