The effect of series resistance and oxide layer formed by thermal oxidation on some electrical parameters of Al/SiO2/p-Si Schottky diodes

Physica B: Condensed Matter

Volumn 388, Issue 1-2, 2007, Pages 10-15

  Dökme, Ilbilge ^a  

^a AHI EVRAN UNIVERSITY   (Turkey)

Author keywords

Insulator layer; Interface states; MIS structure; MS structure; Schottky diodes; Thermal oxidation

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; MIS DEVICES; OXIDATION;

EFFECTIVE BARRIER HEIGHT; ENERGY DENSITY; INSULATOR LAYER; INTERFACE STATES; THERMAL GROWTH;

SCHOTTKY BARRIER DIODES;

EID: 33751225080     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2006.04.032     Document Type: Article

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