|
Volumn 12, Issue 1, 2012, Pages 266-272
|
Effect of series resistance and interface states on the I-V, C-V and G/ω-V characteristics in Au/Bi-doped polyvinyl alcohol (PVA)/n-Si Schottky barrier diodes at room temperature
|
Author keywords
Au PVA (Bi doped) n Si; Frequency dependence; Interface states; Series resistance
|
Indexed keywords
AS DOPING;
BARRIER HEIGHTS;
BI-DOPED;
BIAS DEPENDENCE;
CAPACITANCE VOLTAGE;
CURRENT VOLTAGE;
DONOR CONCENTRATIONS;
ELECTRICAL CHARACTERISTIC;
ELECTRICAL PARAMETER;
ENERGY DENSITY DISTRIBUTIONS;
FORWARD BIAS;
FREQUENCY DEPENDENCE;
FREQUENCY RANGES;
HIGH DENSITY;
IDEALITY FACTORS;
INTERFACE STATE;
INTERFACE STATES;
INTERFACIAL LAYER;
INTERFACIAL POLYMERS;
OHM'S LAW;
REVERSE BIAS;
ROOM TEMPERATURE;
SERIES RESISTANCES;
BIAS VOLTAGE;
DIODES;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON;
SCHOTTKY BARRIER DIODES;
|
EID: 80054822736
PISSN: 15671739
EISSN: None
Source Type: Journal
DOI: 10.1016/j.cap.2011.06.016 Document Type: Article |
Times cited : (81)
|
References (47)
|