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Volumn 12, Issue 1, 2012, Pages 266-272

Effect of series resistance and interface states on the I-V, C-V and G/ω-V characteristics in Au/Bi-doped polyvinyl alcohol (PVA)/n-Si Schottky barrier diodes at room temperature

Author keywords

Au PVA (Bi doped) n Si; Frequency dependence; Interface states; Series resistance

Indexed keywords

AS DOPING; BARRIER HEIGHTS; BI-DOPED; BIAS DEPENDENCE; CAPACITANCE VOLTAGE; CURRENT VOLTAGE; DONOR CONCENTRATIONS; ELECTRICAL CHARACTERISTIC; ELECTRICAL PARAMETER; ENERGY DENSITY DISTRIBUTIONS; FORWARD BIAS; FREQUENCY DEPENDENCE; FREQUENCY RANGES; HIGH DENSITY; IDEALITY FACTORS; INTERFACE STATE; INTERFACE STATES; INTERFACIAL LAYER; INTERFACIAL POLYMERS; OHM'S LAW; REVERSE BIAS; ROOM TEMPERATURE; SERIES RESISTANCES;

EID: 80054822736     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2011.06.016     Document Type: Article
Times cited : (81)

References (47)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.