The C-V-f and G/ω-V-f characteristics of Al/SiO2/p-Si (MIS) structures

Microelectronic Engineering

Volumn 83, Issue 10, 2006, Pages 2021-2026

  Tataroglu B ^a   Altindal, Ş ^a   Tataroglu A ^a  

^a GAZI UNIVERSITY   (Turkey)

Author keywords

Conductance method; Frequency dependence; Interface states; MIS structure; Series resistance

Indexed keywords

ALUMINUM; CAPACITANCE; ELECTRIC CONDUCTANCE; ELECTRIC POTENTIAL; FREQUENCIES; NEGATIVE RESISTANCE; SEMICONDUCTOR DIODES; SILICA; THERMAL EFFECTS; CURRENT DENSITY; ELECTRIC RESISTANCE; SEMICONDUCTOR MATERIALS; VOLTAGE CONTROL;

CONDUCTANCE METHOD; FREQUENCY DEPENDENCE; INTERFACE STATES; METAL-INSULATOR-SEMICONDUCTOR (MIS) STRUCTURES; SERIES RESISTANCE; MIS STRUCTURES;

SEMICONDUCTOR MATERIALS; METAL INSULATOR TRANSITION;

EID: 33745150424     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.04.002     Document Type: Article

References (29)

1. Siad M., Keffous A., Mamma S., Belkacem Y., and Menari H. Appl. Surf. Sci. 236 1-4 (2004) 366
2. Cova P., Singh A., and Masut R.A. J. Appl. Phys. 82 (1997) 5217
3. Singh A. Solid-State Electron. 28 3 (1985) 223
4. Nicollian E.H., and Goetzberger A. Appl. Phys. Lett. 7 (1965) 216
5. Kwa K.S.K., Chattopadhyay S., Jankovic N.D., Olsen S.H., Driscoll L.S., and O'Neill A.G. Semicond. Sci. Technol. 18 (2003) 82
6. Alti{dotless}ndal S., Tataroǧlu A., and Dökme I. Sol. Energy Mater. Sol. Cells 85 (2005) 345
7. Karataş S., and Türüt A. Vacuum 74 (2004) 45
8. Sze S.M. Physics of Semiconductor Devices. 2nd ed. (1981), John Wiley & Sons, New York
9. Rhoderick E.H., and Williams R.H. Metal-Semiconductor Contacts. 2nd ed. (1988), Clarendon Press, Oxford
10. Norde H. J. Appl. Phys. 50 (1979) 5052
11. Sato K., and Yasamura Y. J. Appl. Phys. 58 (1985) 3656
12. Cheung S.K., and Cheung N.W. Apply. Phys. Lett. 49 (1986) 85
13. Chattopadhyay P., and RayChaudhuri B. Solid-State Electron. 35 7 (1992) 1023
14. Nicollian E.H., and Brews J.R. MOS (metal/oxide/semiconductor) Physics and Technology (1982), John Wiley & Sons, New York
15. Depas M., Van Meirhaeghe R.L., Laflere W.H., and Cardon F. Solid-State Electron. 37 3 (1994) 433
16. Konofaos N., McClean I.P., and Thomas C.B. Phys. Stat. Sol. (a) 161 (1997) 111
17. Haddara H.S., and El-Sayed M. Solid-State Electron. 31 8 (1988) 1289
18. Card H.C., and Rhoderick E.H. J. Phys. D 4 (1971) 1589
19. Cova P., and Raychaudhuri B. Solid-State Electron. 35 6 (1992) 875
20. Nicollian E.H., and Goetzberger A. Bell Syst. Tech. J. 46 (1967) 1055
21. Çakar M., and Türüt A. Synth. Met. 138 4 (2003) 549
22. Tataroǧlu A., Alti{dotless}ndal S., and Bülbül M.M. Microelect. Eng. 81 (2005) 140
23. Hung K.K., and Cheng Y.C. J. Appl. Phys. 62 (1987) 4204
24. Chattopadhyay P., and Sanyal S. App. Surf. Sci. 89 (1995) 205
25. Konofaos N., and Evangelou E.K. Semicond. Sci. Technol. 18 (2003) 56
26. Hill W.A., and Coleman C.C. Solid-State Electron. 23 9 (1980) 987
27. Akkal B., Benamara Z., Gruzza B., and Bideux L. Vacuum 57 (2000) 219
28. Tataroǧlu A., Alti{dotless}ndal S., Karadeniz S., and Tuǧluoǧlu N. Microelect. J. 34 (2003) 1043
29. Akkal B., Benamara Z., Gruzza B., Bideux L., and Bouiadjra N.B. Mater. Sci. Eng. C 21 (2002) 291