Au/CdS schottky diode fabricated with nanocrystalline CdS layer

Physica Status Solidi (A) Applied Research

Volumn 163, Issue 2, 1997, Pages 433-443

  Mandal, S K ^a   Maity, A B ^a   Dutta, J ^a   Pal, R ^a   Chaudhuri, S ^a   Pal, A K ^a  

^a DEPARTMENT OF MATERIALS SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC RESISTANCE; GOLD; MAGNETRON SPUTTERING; NANOSTRUCTURED MATERIALS; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; VOLTAGE MEASUREMENT;

CADMIUM SULFIDE; QUANTIZATION EFFECTS;

SCHOTTKY BARRIER DIODES;

EID: 0031247831     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(199710)163:2<433::AID-PSSA433>3.0.CO;2-1     Document Type: Article

References (25)

1. G. SMESTAD. M. KUNST, and C. VIAL, Solar Energy Mater. Solar Cells 26, 277 (1992).
2. H. GLEITER, Progr. Mater. Sci. 33, 223 (1989).
3. M. A. REED, J. N. RANDALL, R. J. MATYI, T. M. MOOR, and A. E. WETSEL, Phys. Rev. Lett. 60, 1043 (1988).
4. E. H. NICOLLIAN and R. TSU, J. Appl. Phys. 74, 4020 (1993).
5. C. M. LAMPERT, Solar Energy Mater. Solar Cell 32, 307 (1994).
6. H. GLEITER, Nanostructured Mater. 1, 1 (1992).
7. R. PAL, D. BHATTACHARYYA, A. B. MAITY, S. CHAUDHURI, and A. K. PAL, Nanostructured Mater. 4, 329 (1994).
8. A. B. MAITY, D. BHATTACHARYYA, S. K. SHARMA, S. CHAUDHURI, and A. K. PAL, Nano-structured Mater. 5, 717 (1995).
9. P. GUPTA, R. PAL, D. BHATTACHARYYA, S. CHAUDHURI, and A. K. PAL. phys. stat. sol. (b) 148, 459 (1995).
10. W. J. DANAHER, L. E. LYONS, and G. C. MORRIS, Solar Energy Mater. 12, 132 (1985).
11. D. DONOVAL, M. BARUS, and Z. ZDIMAL, Solid State Electronics 30, 1365 (1991).
12. H. NORDE, J. Appl. Phys. 50, 5052 (1979).
13. J. H. WERNER, Appl. Phys. A 47, 291 (1988).
14. G. ZHAO. E. M. CHARLSON, E. J. CHARLSON, T. STACY, J. M. MEESE, G. POPOVICI, and M. PRELAS, J. Appl. Phys. 73, 1832 (1993).
15. F. NAMAVAR, H. P. MARUSKA, and N. M. KALKHORAN, Appl. Phys. Lett. 60, 2514 (1992).
16. Z. CHEN, T. Y. LEE, and G. BOSMAN, Appl. Phys. Lett. 64, 3446 (1994).
17. V. PACHEBUTAS, I. SHIMKIENE, D. GULBINAITE, E. BIKULCHIUS, V. PASHISHKEVICHIUS, and A. KROTKUS, Lithunia Phys. J. (USSR) 4, 44 (1993).
18. H. C. CARD and E. H. RHODERICK, J. Phys. D 4, 1589 (1971).
19. J. M. ANDREWS, J. Vac. Sci. Technol. 11, 972 (1974).
20. S. M. SZE, C. R. CROWELL, and D. KAHNG, J. Appl. Phys. 35, 2534 (1964).
21. S. M. SZE, Physics of Semiconductor Devices, 2nd ed., Wiley, New York 1981 (p. 87).
22. V. L. RIDEOUT, Thin Solid Films 48, 261 (1978).
23. B. SEGALL, in: Proc. Internat. Couf. II-VI Semiconducting Compounds, Ed. D. G. THOMAS, W. A. Benjamin, Inc., 1967 (p. 327).
24. S. OKTIK, G. J. RUSSEL, and J. WOODS. Somicond. Sci. Technol. 2, 661 (1987).
25. [25| Q. YE, R. Tsu, and E. H. NICOLLIAN, Phys. Rev. B 44, 1806 (1991).