Electrical characteristics of Au/n-GaAs structures with thin and thick SiO2 dielectric layer

Semiconductors

Volumn 45, Issue 10, 2011, Pages 1286-1290

  Altuntas, H ^a   Altindal, S ^b   Corekci, S ^c   Ozturk, M K ^b   Ozcelik, S ^b  

^a CANKIRI KARATEKIN UNIVERSITY   (Turkey)

^b GAZI UNIVERSITY   (Turkey)

^c KIRKLARELI UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 80053607195     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782611100034     Document Type: Article

References (31)

1. R. Hackam and P. Harrop, IEEE Trans. Electron. Dev. 19, 1231 (1972).
2. S. Ashok, J. M. Borrego, and R. J. Gutmann, Solid State Electron. 22, 621 (1972).
3. S. Altindal, I. Dokme, M. M. Bülbül, N. Yalçin, and T. Serin, Microelectron. Eng. 83, 499 (2006).
4. A. Singh, K. C. Reinhhardt, and W. A. Anderson, J. Appl. Phys. 68, 3475 (1990).
5. P. Chattopadhyay and A. N. Daw, Solid State Electron. 29, 555 (1986).
6. H. C. Card and E. H. Rhoderick, J. Phys. D: Appl. Phys. 4, 1589 (1971).
7. K. Hatori and Y. Toru, Solid State Electron. 34, 531 (1991).
8. M. Biber, Physica B 325, 138 (2003).
9. B. Akkal, Z. Benamara, L. Bideux, and B. Gruzza, Microelectron. J. 30, 673 (1999).
10. P. Cova and A. Singh, Solid State Electron. 33, 11 (1990).
11. C. H. Liu, T. K. Lin, and S. J. Chang, Solid State Electron. 49, 1077 (2005).
12. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
13. A. K. Ghosh, T. Feng, J. I. Haberman, and H. P. Maruska, J. Appl. Phys. 55, 2990 (1984).
14. A. K. Ghosh, C. Fishman, T. Feng, K. K. Ng, and H. C. Card, J. Appl. Phys. 51, 2153 (1980).
15. Í. Dökme, Physica B 388, 10 (2007).
16. A. Singh, K. C. Reinhhardt, and W. A. Anderson, J. Appl. Phys. 68, 3475 (1990).
17. Ş. Altindal, S. Karadeniz, N. Tuǧluoǧlu, and A. Tataroǧlu, Solid State Electron. 47, 1847 (2003).
18. M. K. Hudait and S. B. Kruppanidhi, Solid State Electron. 44, 1089 (2000).
19. H. Çetin and E. Ayyildiz, Appl. Surf. Sci. 253, 596 (2007).
20. H. Altuntas, S. Altindal, S. Özcelik, and H. Shtrikman, Vaccum 83, 1065 (2009).
21. H. Altuntas, S. Altindal, H. Shtrikman, and S. Özcelik, Microelectron. Reliab. 49, 904 (2009).
22. H. Wang, Y. Huang, Q. Sun, J. Chen, L. L. Wang, J. J. Zhu, D. G. Xhao, S. M. Zhang, D. S. Jiang, Y. T. Wang, and H. Yang, Appl. Phys. Lett. 89, 092114 (2006).
23. E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts, 2nd ed. (Clarendon, Oxford, 1988).
24. T. U. Kampen, S. Park, and D. R. T. Zahn, Appl. Surf. Sci. 190, 461 (2002).
25. A. Bolognesi, A. Di. Carlo, P. Lugli, T. Kampen, and D. R. T. Zahn, J. Phys.: Condens. Matter 15, 2719 (2003).
26. S. K. Cheung and N. W. Cheung, Appl. Phys. Lett. 49, 85 (1986).
27. J. H. Werner and H. H. Guttler, J. Appl. Phys. 69, 1522 (1991).
28. J. Osvald and Z. J. Horvarth, Appl. Surf. Sci. 234, 349 (2004).
29. Ş. Karatas and Ş. Altindal, Mater. Sci. Eng. B 122, 133 (2005).
30. E. H. Nicollian and A. Goetzberger, Appl. Phys. Lett. 7216 (1965).
31. E. H. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley, New York, 1982).